VSMY7850X01 High Power Infrared Emitting Diode, 850

VSMY7850X01
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
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21783
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DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY7850X01 is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance Little Star package. A 42 mil chip
provides outstanding low forward voltage and allows DC
operation of the device up to 1 A.
Package type: surface mount
Package form: Little Star®
Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
Peak wavelength: λp = 850 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 60°
Low forward voltage
Designed for high drive currents: up to 1 ADC
and up to 5 A pulses
Low thermal resistance: RthJP = 10 K/W
Floor life: 1 year, MSL 2, acc. J-STD-020
Lead (Pb)-free reflow soldering
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
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Infrared illumination for CMOS cameras (CCTV)
Driver assistance systems
Machine vision IR data transmission
3D TV
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
VSMY7850X01
170
± 60
850
15
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY7850X01-GS08
Tape and reel
MOQ: 2000 pcs, 2000 pcs/reel
Little Star
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
1
A
2
A
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
Surge forward current
tp = 100 μs
IFSM
5
A
PV
2.5
W
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/pin
Rev. 1.5, 07-Nov-14
Tj
125
°C
Tamb
-40 to +100
°C
°C
Tstg
-40 to +100
Acc. figure 7, J-STD-20
Tsd
260
°C
Acc. J-STD-051, soldered on PCB
RthJP
10
K/W
Document Number: 81145
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
Vishay Semiconductors
3
1.2
2.5
1.0
IF - Forward Current (A)
PV - Power Dissipation (W)
www.vishay.com
2
1.5
1
RthJP = 10 K/W
0.5
0.8
0.6
0.4
RthJP = 10 K/W
0.2
0
0
0
20
40
60
80
100
0
120
20
Tamb - Ambient Temperature (°C)
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
SYMBOL
IF = 1 A, tp = 20 ms
VF
MIN.
TYP.
MAX.
UNIT
2.0
2.5
V
IF = 5 A, tp = 100 μs
VF
3.5
V
Temperature coefficient of VF
IF = 1 A
TKVF
-0.2
mV/K
Reverse current
VR = 5 V
IR
not designed for reverse operation
μA
Radiant intensity
Radiant power
Temperature coefficient of φe
IF = 1 A, tp = 20 ms
Ie
IF = 5 A, tp = 100 μs
Ie
130
170
780
390
mW/sr
mW/sr
IF = 1 A, tp = 20 ms
φe
520
mW
IF = 1 A
TKφe
-0.5
%/K
ϕ
± 60
deg
Angle of half intensity
Peak wavelength
IF = 1 A
λp
850
nm
Spectral bandwidth
IF = 1 A
Δλ
30
nm
Temperature coefficient of λp
IF = 1 A
TKλp
0.2
nm/K
Rise time
IF = 1 A
tr
15
ns
Fall time
IF = 1 A
tf
18
ns
Rev. 1.5, 07-Nov-14
Document Number: 81145
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
Φe, rel - Relative Radiant Power
1
1
0.1
0.01
0.75
0.5
0.25
0.001
0
1
2
3
0
650
4
VF - Forward Voltage (V)
750
Fig. 3 - Forward Current vs. Forward Voltage
850
Fig. 5 - Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
tp = 100 µs
Ie, rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
1000
100
10
1
0.01
950
λ- Wavelength (nm)
21776
0.1
1
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
10
ϕ - Angular Displacement
IF - Forward Current (A)
tp = 100 µs
0.4
0.2
0
948013-1
IF - Forward Current (A)
Fig. 4 - Radiant Intensity vs. Forward Current
Rev. 1.5, 07-Nov-14
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81145
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
www.vishay.com
Vishay Semiconductors
TAPING DIMENSIONS in millimeters
20846
Rev. 1.5, 07-Nov-14
Document Number: 81145
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
6
0.7
0.5
5.2
0.7
3
Ø 3.3
1.6
0.6
2.6
7
6
2.6
0.1
0.3
Anode marking
Recommended solder pad
Recommended area for heat sink
connected with anode pad
technical drawings
according to DIN
specifications
8.2
6.2
Not indicated tolerances ± 0.1
8.65
3
17.5
1.2
2
solder pad cathode
solder pad
anode
contour of
device
Drawing-No.: 6.541-5076.01-4
Issue: 3; 22.10.14
Rev. 1.5, 07-Nov-14
19
Document Number: 81145
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
FLOOR LIFE
max. 30 s
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
max. 100 s
Floor life: 1 year
150
max. 120 s
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
100
Conditions: Tamb < 30 °C, RH < 60 %
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for
Preconditioning acc. to JEDEC®, Level 2
Rev. 1.5, 07-Nov-14
Moisture sensitivity level 2, acc. to J-STD-020B
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 81145
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000