AOSMD AON6403L

AON6403L
P-Channel Power Transistor
General Description
Product Summary
The AON6403L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
-30V
-85A
ID (at VGS= -10V)
RDS(ON) (at VGS= -10V)
< 3.1mΩ
RDS(ON) (at VGS = -4.5V)
< 4.3mΩ
100% UIS Tested
100% Rg Tested
- RoHS Compliant
- Halogen Free
D
Top View
Fits SOIC8
footprint !
G
S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current
C
Avalanche Current C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 1: January 2009
-21
-72
A
EAR
259
mJ
83
Steady-State
Steady-State
W
33
2.3
RθJA
RθJC
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W
1.4
TJ, TSTG
Symbol
t ≤ 10s
A
IAR
PDSM
TA=70°C
A
-17
PD
TC=100°C
V
-280
IDSM
TA=70°C
±20
-67
IDM
TA=25°C
Continuous Drain
Current
Units
V
-85
ID
TC=100°C
Maximum
-30
°C
-55 to 150
Typ
14
40
1
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6403L
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
-30
-5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=-250µA
-1.2
VGS=-10V, VDS=-5V
-280
VGS=-10V, ID=-20A
TJ=125°C
VGS=-4.5V, ID=-20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=-5V, ID=-20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-20A
Units
V
TJ=55°C
Static Drain-Source On-Resistance
Max
-1
IGSS
RDS(ON)
Typ
µA
±100
nA
-1.7
-2.2
V
2.6
3.1
3.6
3.5
4.4
A
4.3
mΩ
-1
V
-85
A
82
-0.7
mΩ
S
6100
7600
9120
pF
930
1320
1720
pF
630
1050
1470
pF
1
2
4
Ω
130
163
196
nC
63
79
95
nC
18
22
26
nC
20
33
46
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
13
ns
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V,
18
ns
tD(off)
Turn-Off DelayTime
RL=0.75Ω, RGEN=3Ω
135
ns
tf
Turn-Off Fall Time
52
ns
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=500A/µs
21
26
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
63
78
32
94
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 1: January 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: January 2009
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Page 2 of 6
AON6403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
-3.5V
VDS=-5V
-4V
120
120
-3V
90
-ID(A)
-ID (A)
-10V
60
30
90
60
125°C
30
VGS=-2.5V
25°C
0
0
0
1
2
3
4
0
5
5
Normalized On-Resistance
RDS(ON) (mΩ)
2
3
4
5
1.6
4
VGS=-4.5V
3
VGS=-10V
2
VGS=-10V
ID=-20A
1.4
17
5
VGS=-4.5V
2
ID=-20A
10
1.2
1
0.8
1
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
9
ID=-20A
8
1.0E+01
40
7
1.0E+00
6
5
-IS (A)
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
3
1.0E-04
25°C
2
1.0E-05
1
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: January 2009
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
10
VDS=-15V
ID=-20A
10000
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
8000
6000
4000
Coss
2000
0
Crss
0
0
30
60
90
120
150
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
180
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
400
1000.0
350
10µs
RDS(ON)
limited
10µs
100µs
1ms
10ms
10.0
DC
1.0
0.1
0.0
0.01
250
150
50
1
-VDS (Volts)
10
100
0
0.0001
ZθJC Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
PD
0.1
Ton
0.01
0.00001
0.1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
17
5
2
10
200
100
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
300
Power (W)
-ID (Amps)
100.0
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: January 2009
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Page 4 of 6
AON6403L
230.0
90
200.0
80
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TA=25°C
170.0
140.0
TA=150°C
TA=100°C
110.0
80.0
TA=125°C
50.0
60
50
40
30
20
10
0
20.0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
100
10000
80
1000
50
75
100
125
150
TA=25°C
60
40
17
5
2
10
100
10
20
1
0.0001
0
0
25
50
75
100
125
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.01
1
100
10000
0
18
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
25
TCASE (°C)
Figure 13: Power De-rating (Note F)
Power (W)
-Current rating ID(A)
70
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: January 2009
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Page 5 of 6
AON6403L
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
+
VDC
-
Qgs
Vds
Qgd
+
VDC
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
VDC
-
DUT
Vgs
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
VDC
-
Vgs
Vgs
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 1: January 2009
Vgs
L
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt
-I RM
Vdd
-Vds
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Page 6 of 6