AON6428L

AON6428L
30V N-Channel MOSFET
General Description
Product Summary
The AON6428L uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and general
purpose applications.
VDS
30V
24A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 10mΩ
RDS(ON) (at VGS= 4.5V)
< 14.5mΩ
100% UIS Tested
100% Rg Tested
D
Top View
1
8
2
7
3
6
4
5
G
S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current
C
Avalanche Current C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 1: April 2009
IAR
20
A
EAR
20
mJ
25
Steady-State
Steady-State
W
10
2
RθJA
RθJC
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W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
8
PDSM
TA=70°C
A
11
PD
TC=100°C
V
80
IDSM
TA=70°C
±20
19
IDM
TA=25°C
Continuous Drain
Current
Units
V
24
ID
TC=100°C
Maximum
30
°C
-55 to 150
Typ
21
50
3.5
Max
25
60
5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6428L
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.2
VGS=10V, VDS=5V
80
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VGS(th)
ID(ON)
RDS(ON)
Typ
µA
±100
nA
1.7
2.2
V
8.3
10
12.4
15
11.3
14.5
mΩ
1
V
25
A
A
43
0.7
mΩ
S
620
770
920
pF
170
240
310
pF
45
77
110
pF
0.4
0.8
1.4
Ω
11.8
14.8
17.8
nC
5.7
7.1
8.5
nC
1.7
2.2
2.6
nC
1.8
3.1
4.3
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
5
ns
3
ns
18
ns
3
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
9
11
13
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
18
23
28
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 1: April 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: April 2009
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Page 2 of 6
AON6428L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
80
10V
70
7V
4.5V
60
4V
40
40
ID(A)
50
ID (A)
VDS=5V
50
3.5V
30
30
20
20
VGS=3V
10
125°C
10
0
0
0
1
2
3
4
5
0
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
4
5
1.8
Normalized On-Resistance
14
VGS=4.5V
12
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
16
10
8
VGS=10V
6
4
1.6
VGS=10V
ID=20A
1.4
17
5
2
VGS=4.5V10
1.2
1
ID=20A
0.8
2
0
5
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
35
25
50
1.0E+02
ID=20A
30
1.0E+01
40
1.0E+00
25
20
IS (A)
RDS(ON) (mΩ)
25°C
125°C
15
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
10
5
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: April 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6428L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=20A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Crss
0
0
2
4
6
8
10
12
14
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
16
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
10µs
100.0
160
RDS(ON)
limited
1.0
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
1
17
5
2
10
120
80
40
1
VDS (Volts)
10
100
0
0.0001
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=5°C/W
PD
0.1
Ton
0.01
0.00001
0.1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
10.0
0.1
ZθJC Normalized Transient
Thermal Resistance
Coss
400
200
0
ID (Amps)
Ciss
800
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: April 2009
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Page 4 of 6
AON6428L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
TA=25°C
80
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=100°C
60
TA=150°C
40
20
TA=125°C
25
20
15
10
5
0
0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
125
150
10000
30
TA=25°C
25
1000
20
Power (W)
Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
15
10
17
5
2
10
100
10
5
1
0.00001
0
0
25
50
75
100
125
150
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Ton
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: April 2009
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Page 5 of 6
AON6428L
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 1: April 2009
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6