VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). • • • • • Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 AEC-Q101 qualified Peak wavelength: p = 940 nm • • • • • High reliability High radiant power High radiant intensity High speed Angle of half sensitivity: = ± 60° • • • • • • Low forward voltage Suitable for high pulse current operation 0805 standard surface-mountable package Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed IR data transmission • High power emitter for low space applications • High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) VSMB1940X01 6 Note • Test conditions see table “Basic Characteristics“ (deg) p (nm) tr (ns) ± 60 940 15 ORDERING INFORMATION ORDERING CODE VSMB1940X01 Note • MOQ: minimum order quantity PACKAGING REMARKS PACKAGE FORM Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.4, 02-May-13 TEST CONDITION tp/T = 0.1, tp = 100 μs tp = 100 μs t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 100 200 1 160 100 - 40 to + 85 - 40 to + 100 260 270 V mA mA A mW °C °C °C °C K/W Document Number: 81933 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB1940X01 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 270 K/W 80 60 40 100 20 0 0 10 21532 20 30 40 50 60 70 80 60 RthJA = 270 K/W 40 20 0 90 100 Tamb - Ambient Temperature (°C) 80 0 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 Tamb - Ambient Temperature (°C) 21533 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.15 1.35 1.6 IF = 1 A, tp = 100 μs VF 2.2 V mV/K IF = 1 mA TKVF - 1.5 IF = 100 mA TKVF - 1.1 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ UNIT V mV/K 10 70 μA pF IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 μs Ie 60 IF = 100 mA, tp = 20 ms e 40 mW IF = 1 mA TKe - 1.1 %/K IF = 100 mA TKe - 0.51 %/K ± 60 deg p 940 nm Angle of half intensity 3 6 12 mW/sr mW/sr Peak wavelength IF = 30 mA Spectral bandwidth IF = 30 mA 25 nm Temperature coefficient of p IF = 30 mA TKp 0.25 nm Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns d 0.5 mm Virtual source diameter Rev. 1.4, 02-May-13 Document Number: 81933 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB1940X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 180 Ie rel - Relative Radiant Intensity (%) 100 10 tp = 100 µs tp/T= 0.001 IF = 1 mA 160 140 120 IF = 100 mA 100 80 60 tp = 20 ms 1 40 0 1 2 3 VF - Forward Voltage (V) 21534 - 60 - 40 - 20 Fig. 3 - Forward Current vs. Forward Voltage 40 60 80 100 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 Φe rel - Relative Radiant Power (%) 100 108 90 - 40 - 20 0 20 40 60 80 90 IF = 30 mA 80 70 60 50 40 30 20 10 0 840 100 Tamb - Ambient Temperature (°C) 21443 880 920 960 1000 1040 λ - Wavelength (nm) 21445 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Power vs. Wavelength 0° 100 10° 20° 30° Ie, rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 20 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 VF, rel - Relative Forward Voltage (%) 0 Tamb - Ambient Temperature (°C) 21444 10 tp = 1 µs 1 0.1 40° 1.0 0.9 50° 0.8 60° 0.01 1 20921 10 100 1000 IF - Forward Pulse Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.4, 02-May-13 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) 1000 80° 0.6 0.4 0.2 0 948013-1 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81933 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB1940X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 50 100 19841 150 200 250 FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % 200 300 Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters 20018 Rev. 1.4, 02-May-13 Document Number: 81933 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB1940X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 21501 Rev. 1.4, 02-May-13 Document Number: 81933 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB1940X01 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.4, 02-May-13 technical drawings according to DIN specifications Document Number: 81933 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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