VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1 A. Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 60° Low forward voltage Designed for high drive currents: up to 1 A DC and up to 5 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • • • • Infrared illumination for CMOS cameras (CCTV) Driver assistance systems Machine vision IR data transmission 3D TV PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) VSMY7850X01 170 ± 60 850 20 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY7850X01-GS08 Tape and reel MOQ: 2000 pcs, 2000 pcs/reel Little Star Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 1 A 2 A Peak forward current tp/T = 0.5, tp 100 μs IFM Surge forward current tp = 100 μs IFSM 5 A PV 2.5 W Power dissipation Junction temperature Tj 125 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Acc. figure 7, J-STD-20 Tsd 260 °C Acc. J-STD-051, soldered on PCB RthJP 10 K/W Soldering temperature Thermal resistance junction/pin Rev. 1.0, 27-Jun-11 1 Document Number: 81145 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 Vishay Semiconductors 3 1.2 2.5 1.0 IF - Forward Current (A) PV - Power Dissipation (W) www.vishay.com 2 1.5 1 RthJP = 10 K/W 0.5 0.8 0.6 0.4 RthJP = 10 K/W 0.2 0 0 0 20 40 60 80 100 0 120 20 Tamb - Ambient Temperature (°C) 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 1 A, tp = 20 ms VF 2.0 2.5 V IF = 5 A, tp = 100 μs VF 3.5 V Temperature coefficient of VF IF = 1 A TKVF - 0.2 mV/K Reverse current VR = 5 V IR not designed for reverse operation μA Forward voltage Radiant intensity Radiant power Temperature coefficient of e MIN. IF = 1 A, tp = 20 ms Ie IF = 5 A, tp = 100 μs Ie 780 mW/sr IF = 1 A, tp = 20 ms e 520 mW IF = 1 A TKe - 0.5 %/K ± 60 deg p 850 nm Angle of half intensity 130 170 390 mW/sr Peak wavelength IF = 1 A Spectral bandwidth IF = 1 A 30 nm Temperature coefficient of p IF = 1 A TKp 0.2 nm/K Rise time IF = 1 A tr 15 ns Fall time IF = 1 A tf 18 ns Rev. 1.0, 27-Jun-11 2 Document Number: 81145 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0° 10 20° 1 0.1 0.01 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie, rel - Relative Radiant Intensity IF - Forward Current (A) 10° 30° tp = 100 µs 80° 0.001 0 1 2 3 4 0.6 VF - Forward Voltage (V) 0.4 0.2 0 94 8013 Fig. 6 - Relative Radiant Intensity vs. Angular Displacement Fig. 3 - Forward Current vs. Forward Voltage Ie - Radiant Intensity (mW/sr) 1000 tp = 100 µs 100 10 1 0.01 0.1 1 10 IF - Forward Current (A) Fig. 4 - Radiant Intensity vs. Forward Current Φe, rel - Relative Radiant Power 1 0.75 0.5 0.25 0 650 750 850 950 λ- Wavelength (nm) 21776 Fig. 5 - Relative Radiant Power vs. Wavelength Rev. 1.0, 27-Jun-11 3 Document Number: 81145 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 www.vishay.com Vishay Semiconductors TAPING DIMENSIONS in millimeters 20846 Rev. 1.0, 27-Jun-11 4 Document Number: 81145 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 20848 Rev. 1.0, 27-Jun-11 5 Document Number: 81145 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 max. 30 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: max. 100 s Floor life: 4 weeks 150 max. 120 s 100 Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020B max. ramp up 3 °C/s max. ramp down 6 °C/s 50 DRYING 0 0 19841 50 100 150 200 250 300 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for Preconditioning acc. to JEDEC, Level 2a Rev. 1.0, 27-Jun-11 6 Document Number: 81145 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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