APT50N60JCU2 ISOTOP® Boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 52A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K D Features • G S • • • K S G - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant D Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 52 38 130 ±20 45 290 15 3 1900 Unit V A V mΩ W A April, 2008 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-6 APT50N60JCU2 – Rev 2 Symbol VDSS APT50N60JCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 22.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 10V VBus = 300V ID = 49A Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω VGS = 0V, IS = - 49A IS = - 49A Tj = 25°C VR = 400V Tj = 25°C diS/dt = 100A/µs Min Typ 7.2 8.5 nF 150 nC 34 51 21 30 ns 100 45 675 µJ 520 1100 µJ 635 0.9 1.2 V 600 ns 17 µC April, 2008 Qg Test Conditions VGS = 0V ; VDS = 25V f = 1MHz www.microsemi.com 2-6 APT50N60JCU2 – Rev 2 Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance APT50N60JCU2 Chopper diode ratings and characteristics Symbol VRRM VF Characteristic Max. Peak Repetitive Reverse Voltage Test Conditions IF = 30A IF = 60A IF = 30A Diode Forward Voltage IRM Maximum Reverse Leakage Current VR = 600V CT Junction Capacitance VR = 200V IF=1A,VR=30V di/dt =100A/µs Reverse Recovery Time trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =200A/µs Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Min 600 Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 1.8 2 1.3 2.2 V 100 500 36 Tj = 25°C 22 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 25 160 3 6 35 480 85 920 20 Tj = 125°C Unit V µA pF ns A nC ns nC A Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ CoolMos Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -40 Max 0.43 1.1 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) April, 2008 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-6 APT50N60JCU2 – Rev 2 7.8 (.307) 8.2 (.322) APT50N60JCU2 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.45 0.9 0.4 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 100 80 60 40 TJ=125°C 20 TJ=25°C 0 0 5 10 15 20 25 0 Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 60 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 0.9 ID, DC Drain Current (A) 50 40 30 20 10 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) 25 50 75 100 125 TC, Case Temperature (°C) 150 April, 2008 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) www.microsemi.com 4-6 APT50N60JCU2 – Rev 2 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 0.9 0.8 0.7 limited by RDSon 100 100 µs 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 100 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 1000 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) April, 2008 0 100 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 50A 2.5 www.microsemi.com 5-6 APT50N60JCU2 – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APT50N60JCU2 APT50N60JCU2 Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) 20 50 tf 40 30 tr 20 10 0 0 0 10 20 30 40 50 60 70 80 0 10 20 ID, Drain Current (A) 1.6 Switching Energy (mJ) Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L=100µH 2 1.5 60 70 80 Eoff Eon 1 0.5 0 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 ZVS ZCS 200 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 150 100 hard switching 50 0 5 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current 250 10 20 30 40 50 Gate Resistance (Ohms) 300 Frequency (kHz) 50 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) April, 2008 Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 40 Switching Energy vs Gate Resistance 2.5 Switching Energy vs Current 2 30 ID, Drain Current (A) ISOTOP® is a registered trademark of ST Microelectronics NV COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APT50N60JCU2 – Rev 2 td(on) and td(off) (ns) 120