APTM50AM17FG Phase leg MOSFET Power Module VDSS = 500V RDSon = 17mΩ typ @ Tj = 25°C ID = 180A @ Tc = 25°C Application VBUS • • • • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1 Q2 • G2 0/VBUS • • • VBUS 0/VBUS OUT Benefits S1 • • • • • S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 180 135 720 ±30 20 1250 51 50 3000 Unit V A V mΩ W A July, 2006 G1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50AM17FG– Rev 2 S2 Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTM50AM17FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V T j = 125°C VGS = 10V, ID = 90A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 17 3 Min VGS = 10V VBus = 250V ID = 180A Typ 28 5.6 0.36 560 Unit Max Unit µA mΩ V nA nF nC 280 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 180A R G = 0.5Ω 38 93 4140 6224 µJ 4052 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 180A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C µJ 3380 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 180A, R G = 0.5Ω Test Conditions ns 75 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 180A, R G = 0.5Ω IS = -180A VR = 333V diS/dt = 400A/µs Max 400 2000 20 5 ±200 160 Source - Drain diode ratings and characteristics Symbol IS Typ 10.4 38.4 Max 180 135 1.3 15 270 540 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 180A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM50AM17FG– Rev 2 Symbol APTM50AM17FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.1 150 125 100 5 3.5 280 Unit °C/W V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM50AM17FG– Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM50AM17FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 600 7V 400 6.5V 6V 200 5.5V 0 0 5V 5 10 15 20 VDS, Drain to Source Voltage (V) 400 300 TJ=25°C 200 100 TJ=125°C 0 25 TJ=-55°C 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 0 180 Normalized to VGS=10V @ 90A 1.05 ID, DC Drain Current (A) V GS=10V 1 V GS=20V 0.95 0.9 160 140 120 100 80 60 40 20 0 50 100 150 200 ID, Drain Current (A) 250 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 www.microsemi.com 4–6 APTM50AM17FG– Rev 2 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 600 800 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 limited by R DSon 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us 100 1 ms Single pulse TJ =150°C TC=25°C 10 10 ms 100 ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 10000 Coss 1000 Crss 100 10 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=180A TJ=25°C 12 VDS=100V VDS=250V 10 VDS=400V 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) VGS=10V ID=90A www.microsemi.com 5–6 APTM50AM17FG– Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50AM17FG APTM50AM17FG Rise and Fall times vs Current 160 70 140 td(off) V DS=333V RG=0.5Ω T J=125°C L=100µH 60 50 40 30 VDS=333V RG=0.5Ω TJ=125°C L=100µH 120 t r and tf (ns) td(on) and t d(off) (ns) Delay Times vs Current 80 td(on) 100 80 tr 60 40 20 20 0 10 40 80 120 160 200 240 ID, Drain Current (A) 280 40 120 160 200 240 ID, Drain Current (A) 280 20 VDS=333V RG=0.5Ω T J=125°C L=100µH 10 8 Switching Energy (mJ) Switching Energy (mJ) 80 Switching Energy vs Gate Resistance Switching Energy vs Current 12 Eon 6 Eoff 4 2 VDS=333V ID=180A TJ=125°C L=100µH 16 12 Eoff Eon 8 Eoff 4 0 0 40 80 120 160 200 240 ID, Drain Current (A) 0 280 350 300 ZCS 250 VDS=333V D=50% RG=0.5Ω TJ=125°C TC=75°C 200 150 Hard switching 100 ZVS 50 0 40 5 7.5 10 12.5 60 80 100 120 140 160 I D, Drain Current (A) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50AM17FG– Rev 2 July, 2006 20 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current 400 2.5 Gate Resistance (Ohms) 450 Frequency (kHz) tf