APTM120A20DG Phase leg with Series diodes MOSFET Power Module OUT S1 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 50 37 200 ±30 240 1250 12 30 1300 Unit V A V mΩ W A July, 2006 G1 Application • Zero Current Switching resonant mode mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120A20DG Rev 1 VBUS VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C APTM120A20DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 25A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V IRM IF VF Maximum Reverse Leakage Current VGS = 10V VBus = 600V ID = 50A Reverse Recovery Time Qrr Reverse Recovery Charge Typ 15.2 2.2 0.42 600 Max Unit mA mΩ V nA nF nC 10 10 36 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8Ω 5.6 Test Conditions Typ Max 250 600 120 2 2.3 Tj = 125°C 1.8 Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C 2.4 Tj = 125°C 8 www.microsemi.com mJ 0.81 Tj = 25°C Tj = 125°C T c = 70°C mJ 0.6 Min 1200 IF = 120A IF = 240A ns 68 2.79 IF = 120A VR = 800V di/dt = 400A/µs Unit 390 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8Ω VR=1200V Max 1.5 6 240 5 ±450 84 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 50A R G =0.8Ω IF = 120A trr 200 Min DC Forward Current Diode Forward Voltage Typ 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage Min VGS = 0V,VDS = 1200V Unit V µA A 2.5 V ns July, 2006 IDSS Characteristic µC 2–6 APTM120A20DG Rev 1 Symbol APTM120A20DG Thermal and package characteristics Symbol Characteristic Min Transistor Series diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.46 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM120A20DG Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM120A20DG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 180 150 7V 120 ID, Drain Current (A) 6.5V 90 6V 60 5.5V 30 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 150 120 90 60 TJ=25°C 30 0 0 0 5 10 15 20 25 30 0 ID, DC Drain Current (A) 1.2 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 50 Normalized to VGS =10V @ 25A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.9 0.8 40 30 20 10 0 0 30 60 90 120 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C TJ=125°C 5V www.microsemi.com 4–6 APTM120A20DG Rev 1 I D, Drain Current (A) VGS =15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=25A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs 100 limited by RDS on 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 14 I D=50A TJ=25°C 12 10 8 V DS =240V VDS=600V VDS=960V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 120 240 360 480 600 720 840 Gate Charge (nC) July, 2006 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM120A20DG Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120A20DG APTM120A20DG Delay Times vs Current Rise and Fall times vs Current 50 t d(off) 60 tf tr and tf (ns) td(on) and td(off) (ns) 80 V DS =800V RG =0.8Ω T J=125°C L=100µH 40 20 V DS =800V RG =0.8Ω T J=125°C L=100µH 25 0 0 10 30 50 70 90 110 10 30 I D, Drain Current (A) 110 9 VDS=800V RG=0.8Ω TJ=125°C L=100µH 9 E on Switching Energy (mJ) Switching Energy (mJ) 50 70 90 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 12 6 3 Eoff 0 Eon 6 VDS=800V ID=50A T J=125°C L=100µH 3 Eoff 0 10 30 50 70 90 110 0 ID, Drain Current (A) Operating Frequency vs Drain Current Hard switching 125 100 ZCS 75 50 25 0 20 30 40 ID, Drain Current (A) 4 5 6 T J=150°C 100 T J=25°C 10 1 50 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120A20DG Rev 1 July, 2006 10 3 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 150 2 1000 V DS =800V D=50% RG =0.8Ω T J=125°C T C=75°C 175 1 Gate Resistance (Ohms) 200 Frequency (kHz) tr t d(on)