APTM20AM06SG Phase leg Series & parallel diodes MOSFET Power Module VDSS = 200V RDSon = 6mΩ typ @ Tj = 25°C ID = 300A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features G1 OUT • S1 Q2 G2 0/VBUS • • • VBUS 0/VBUS Benefits OUT S1 • • • • • S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 300 225 1200 ±30 7.2 1250 24 30 1300 Unit V A V mΩ W A July, 2006 G1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM20AM06SG – Rev 2 S2 Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTM20AM06SG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 200V T j = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 150A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM IF VF Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Min IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Typ 18.5 6.03 0.58 325 Max 500 2000 7.2 5 ±500 Unit Max Unit µA mΩ V nA nF 144 nC 156 Test Conditions DC Forward Current Diode Forward Voltage 6 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A R G = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, R G = 0.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, R G = 0.8Ω VR=200V Typ 3 VGS = 10V VBus = 100V ID = 300A Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Min 28 56 81 99 1543 2027 µJ 1770 Typ Max 350 600 Tj = 125°C 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 www.microsemi.com µJ 1517 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns Unit V µA A 1.15 V July, 2006 Symbol Characteristic ns nC 2-6 APTM20AM06SG – Rev 2 Electrical Characteristics APTM20AM06SG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min 200 Tj = 25°C Tj = 125°C Tc = 85°C VR=200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Symbol Characteristic Min Transistor Series diode Diode parallel RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Wt Package Weight To heatsink For terminals M6 M5 Max 350 600 120 1.1 1.4 0.9 Thermal and package characteristics Torque Typ 2500 -40 -40 -40 3 2 Typ Unit V µA A 1.15 V ns nC Max 0.10 0.46 0.46 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM20AM06SG – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM20AM06SG Typical Performance Curve Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 720 800 VGS =15 & 10V 600 I D, Drain Current (A) 8V 400 7V 200 6V 0 600 480 360 T J=125°C 240 TJ=25°C 120 TJ =-55°C 0 0 2.5 5 7.5 10 12.5 15 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS (on) vs Drain Current 320 1.2 Normalized to V GS=10V @ 44.5A 1.1 VGS=10V 1.05 1 0.95 VGS =20V 0.9 0 100 200 300 400 500 I D, Drain Current (A) 280 240 200 160 120 80 40 0 600 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 1.15 I D, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 4-6 APTM20AM06SG – Rev 2 ID, Drain Current (A) Transfert Characteristics 840 1000 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) VGS=10V ID= 150A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 10000 1.2 1.1 1.0 0.9 0.8 1000 limited by RDSon 100µs 100 1ms 10ms Single pulse TJ=150°C TC=25°C 10 0.7 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 V DS =40V I D=300A 10 TJ=25°C V DS =100V 10 20 30 40 50 VDS, Drain to Source Voltage (V) 8 VDS=160V 6 4 2 0 0 60 120 180 240 300 360 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 www.microsemi.com 5-6 APTM20AM06SG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20AM06SG APTM20AM06SG Rise and Fall times vs Current 90 160 80 140 td(off) 70 60 50 40 30 80 tr 60 40 20 0 100 150 200 250 300 350 400 450 500 I D, Drain Current (A) ID, Drain Current (A) Switching Energy vs Gate Resistance 6000 Switching Energy vs Current 3000 2500 Eon VDS=133V RG=0.8Ω T J=125°C L=100µH Switching Energy (µJ) 3500 Eoff 2000 1500 1000 500 0 100 150 200 250 300 350 400 450 500 4000 3000 2000 200 ZVS ZCS 150 Hard switching 100 50 0 2 4 6 8 10 Source to Drain Diode Forward Voltage 10000 1000 100 60 90 120 150 180 210 240 270 I D, Drain Current (A) TJ=150°C TJ =25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM20AM06SG – Rev 2 July, 2006 30 Eoff 0 I DR, Reverse Drain Current (A) VDS=133V D=50% RG=0.8Ω TJ=125°C TC=75°C 250 Eon 1000 Operating Frequency vs Drain Current 300 Eoff Gate Resistance (Ohms) 400 350 VDS=133V ID=300A T J=125°C L=100µH 5000 I D, Drain Current (A) Frequency (kHz) tf 10 100 150 200 250 300 350 400 450 500 4000 Eon and Eoff (µJ) 100 td(on) 20 VDS=133V RG=0.8Ω T J=125°C L=100µH 120 VDS=133V RG=0.8Ω TJ=125°C L=100µH t r and tf (ns) td(on) and td(off) (ns) Delay Times vs Current