APTM50DUM19G Dual common source MOSFET Power Module D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q1 VDSS = 500V RDSon = 19mΩ typ @ Tj = 25°C ID = 163A @ Tc = 25°C Q2 G1 G2 S1 S2 S D1 S D2 S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 163 122 652 ±30 22.5 1136 46 50 2500 Unit V A V mΩ W A July, 2006 S2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DUM19G – Rev 3 G1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTM50DUM19G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V T j = 125°C VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Reverse Recovery Charge 19 3 Min VGS = 10V VBus = 250V ID = 163A Max Unit µA mΩ V nA nF nC 18 35 ns 87 77 3020 µJ 2904 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 163A, R G = 1Ω 4964 µJ 3384 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 163A IS = -163A, VR = 250V diS/dt = 400A/µs Unit 260 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 163A, R G = 1Ω Test Conditions Typ 22.4 4.8 0.36 492 Max 200 1000 22.5 5 ±200 132 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 163A R G = 1Ω Source - Drain diode ratings and characteristics Typ 680 57 Max 163 122 1.3 8 Unit A V V/ns ns µC www.microsemi.com July, 2006 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 163A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C 2–6 APTM50DUM19G – Rev 3 Symbol APTM50DUM19G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.11 150 125 100 5 3.5 280 Unit °C/W V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM50DUM19G – Rev 3 July, 2006 SP6 Package outline (dimensions in mm) APTM50DUM19G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.1 0.7 0.08 0.5 0.06 0.3 0.04 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 600 8V V GS=10&15V 500 ID, Drain Current (A) 7.5V 400 7V 300 6.5V 200 6V 100 VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 300 200 T J=25°C 100 T J=125°C 5.5V 0 TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 81.5A 1.15 VGS=10V 1.10 1.05 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 180 I D, DC Drain Current (A) 1.20 1 VGS , Gate to Source Voltage (V) V GS=20V 1.00 0.95 0.90 0.85 160 140 120 100 80 60 40 20 0.80 0 0 100 200 300 400 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 I D, Drain Current (A) 10 500 700 RDS(on) Drain to Source ON Resistance 1 4–6 APTM50DUM19G – Rev 3 Thermal Impedance (°C/W) 0.12 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=81.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 limited by R DSon 100 limited by RDSon 10 1ms Single pulse TJ =150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=163A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) July, 2006 C, Capacitance (pF) 100µs www.microsemi.com 5–6 APTM50DUM19G – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DUM19G APTM50DUM19G Delay Times vs Current Rise and Fall times vs Current 120 100 80 V DS =333V RG =1Ω T J=125°C L=100µH 60 40 td(on) 20 80 60 40 tr 0 20 60 100 140 180 220 ID, Drain Current (A) 260 20 VDS=333V RG=1Ω T J=125°C L=100µH 8 6 Eon Eoff 4 100 140 180 220 260 Switching Energy vs Gate Resistance 16 Switching Energy (mJ) 10 60 I D, Drain Current (A) Switching Energy vs Current 2 V DS=333V ID=163A T J=125°C L=100µH 14 12 10 Eoff 8 Eon 6 4 Eoff 2 0 0 20 60 100 140 180 220 0 260 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 ZVS 300 250 ZCS 200 VDS=333V D=50% RG=1Ω TJ=125°C TC=75°C 150 100 50 Hard switching 0 0 20 40 60 80 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) 400 Frequency (kHz) tf 20 0 Switching Energy (mJ) VDS=333V RG=1Ω TJ=125°C L=100µH 100 tr and t f (ns) t d(on) and td(off) (ns) td(off) 100 120 140 1000 Source to Drain Diode Forward Voltage TJ=150°C 100 10 T J=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DUM19G – Rev 3 July, 2006 ID, Drain Current (A)