APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses • • • • E CK C Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant EK G Absolute maximum ratings ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 100°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 610 475 800 ±20 2307 800A @ 1150V Unit V A V W May, 2009 IC Parameter Collector - Emitter Breakdown Voltage These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGL475U120DAG – Rev 1 Symbol VCES APTGL475U120DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) Gate Threshold Voltage Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25°C IC = 400A Tj = 150°C VGE = VCE, IC = 10 mA Min Typ 5 1.8 2.2 5.8 Test Conditions Min Typ Max 4 2.2 Unit mA 6.5 V Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 24.6 1.62 1.38 nF QG Gate charge VGE=±15V 3.4 µC Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 400A RG = 1.8Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 400A RG = 1.8Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 400A TJ = 25°C RG = 1.8Ω TJ = 150°C VGE≤15V ; VCC=900V tp≤10µs ; Tj=150°C 160 30 340 Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ISC Short circuit current ns 80 170 40 ns 450 170 20.8 42 22 37.2 mJ 2000 A mJ Series diode ratings and characteristics IF VF Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min 1200 Tj = 25°C Tj = 125°C IF = 360A VR = 800V di/dt = 1200A/µs www.microsemi.com Max 400 2000 Tj = 125°C 360 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C 350 Tj = 25°C 3.3 Tj = 125°C 17.3 Tj = 90°C IF = 360A IF = 720A IF = 360A Typ Unit V µA A 3 V May, 2009 IRM Test Conditions ns µC 2–5 APTGL475U120DAG – Rev 1 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTGL475U120DAG Thermal and package characteristics Symbol Characteristic Min IGBT Series diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To Heatsink For teminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.065 0.13 Unit °C/W V 175 125 100 5 3.5 280 °C N.m g SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com Operating Frequency vs Collector Current 80 60 ZCS 50 VCE=600V D=50% R G=1.8 Ω T J=150°C Tc=75°C May, 2009 70 40 ZVS Hard switching 30 20 10 0 0 120 240 360 480 600 IC (A) www.microsemi.com 3–5 APTGL475U120DAG – Rev 1 Fmax, Operating Frequency (kHz) Typical IGBT Performance Curve APTGL475U120DAG Output Characteristics (VGE=15V) 800 Output Characteristics 800 TJ = 150°C VGE=19V 600 TJ=25°C VGE=15V TJ=150°C IC (A) IC (A) 600 400 400 VGE=9V 200 200 0 0 0 1 2 3 4 0 1 VCE (V) Transfert Characteristics 800 120 E (mJ) IC (A) VCE = 600V VGE = 15V RG = 1.8 Ω TJ = 150°C 140 600 400 3 100 Eon 80 60 Eoff 40 TJ=150°C 200 4 Energy losses vs Collector Current 160 TJ=25°C 2 VCE (V) 20 0 0 5 6 7 8 9 10 11 12 0 13 200 Switching Energy Losses vs Gate Resistance 600 800 Reverse Bias Safe Operating Area 80 960 VCE = 600V VGE =15V IC = 400A TJ = 150°C 70 Eon 800 640 IC (A) 60 E (mJ) 400 IC (A) VGE (V) 50 Eoff 40 480 320 30 VGE=15V TJ=150°C RG=1.8 Ω 160 20 0 0 2.5 5 7.5 Gate Resistance (ohms) 10 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 0.9 0.05 0.7 May, 2009 0.04 IGBT 0.5 0.03 0.02 0.01 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–5 APTGL475U120DAG – Rev 1 Thermal Impedance (°C/W) 0.07 APTGL475U120DAG Typical Series diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.15 0.9 0.12 0.7 0.09 0.5 0.06 0.3 0.03 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge trr, Reverse Recovery Time (ns) 750 TJ=125°C 600 450 300 TJ=25°C 150 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 400 TJ=125°C VR=800V 300 720 A 200 360 A 180 A 100 0 0 3.5 1200 2400 3600 4800 6000 7200 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 42 TJ=125°C VR=800V 36 720 A 30 360 A 24 180 A 18 12 6 0 0 1200 2400 3600 4800 6000 7200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 2400 300 TJ=125°C VR=800V 240 720 A 360 A 180 A 180 120 60 0 0 1200 2400 3600 4800 6000 7200 -diF/dt (A/µs) Max. Average Forward Current vs. Case Temp. 600 Duty Cycle = 0.5 TJ=175°C 480 1800 IF(AV) (A) 1200 600 360 240 120 May, 2009 C, Capacitance (pF) -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (ºC) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGL475U120DAG – Rev 1 IF, Forward Current (A) 900