APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant EK G Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 400 300 600 ±20 1780 Tj = 150°C 600A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W July, 2006 C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGF300U120DG – Rev 1 E CK Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGF300U120DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy 4.5 Typ 21 2.9 1.52 120 50 310 Max 500 750 3.9 Unit 6.5 ±1 V µA Max Unit IF = 300A IF = 300A VR = 600V di/dt =4500A/µs www.microsemi.com V nF ns 130 60 360 40 ns 25 mJ 15 Typ Max 1200 VR=1200V µA 30 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 3.3 4 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 300A R G = 3Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A R G = 3Ω VGE = 15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C R G = 3Ω Fall Time Td(on) Min Unit V Tj = 25°C 250 Tj = 125°C 500 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 300 2.1 1.9 120 210 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 22 43 7 15 µA A V ns µC July, 2006 ICES Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 300A Tj = 125°C VGE = VCE, IC = 12mA VGE = ±20V, VCE = 0V mJ 2–5 APTGF300U120DG – Rev 1 Symbol Characteristic APTGF300U120DG Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.07 0.12 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGF300U120DG – Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGF300U120DG Typical Performance Curve Output Characteristics 600 500 500 TJ=25°C 400 300 200 VGE =20V VGE =12V 300 T J=125°C VGE=9V 100 0 0 0 1 2 3 V CE (V) 4 5 6 0 600 70 500 60 2 3 4 V CE (V) 5 VCE = 600V VGE = 15V RG = 3 Ω T J = 125°C 50 E (mJ) 400 TJ=125°C 300 1 6 Energy losses vs Collector Current Transfert Characteristics 200 Eon Eoff 40 30 20 TJ=25°C 100 10 Er Eoff 0 0 5 6 7 8 9 10 11 0 12 100 200 300 400 500 600 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 700 VCE = 600V VGE =15V IC = 300A T J = 125°C 60 600 Eon 500 IC (A) 80 E (mJ) VGE =15V 200 100 IC (A) TJ = 125°C 400 IC (A) IC (A) Output Characteristics (V GE=15V) 600 Eoff 40 400 300 VGE =15V TJ =125°C RG=3 Ω 200 20 100 Er 0 0 0 2 0 4 6 8 10 12 14 16 18 20 Gate Resistance (ohms) 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 0.05 0.04 0.03 0.02 0.01 0.9 IGBT 0.7 July, 2006 0.07 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–5 APTGF300U120DG – Rev 1 Thermal Impedance (°C/W) 0.08 APTGF300U120DG Forward Characteristic of diode 600 VCE=600V D=50% RG=3 Ω TJ =125°C TC=75°C 80 ZVS 60 500 40 hard switching 20 T J=125°C 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 300 TJ=25°C 200 ZCS 100 0 0 0 50 100 150 200 IC (A) 0 250 300 350 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.14 0.12 0.1 0.9 Diode 0.7 0.08 0.06 0.04 0.02 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGF300U120DG – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)