New Product VS-APH3006-F3, VS-EPH3006-F3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Low forward voltage drop • Hyperfast soft recovery time • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC TO-247AC TO-247AC (Modified) Base cathode 4, 2 Base cathode 2 • Designed and qualified according to JEDEC-JESD47 DESCRIPTION/APPLICATIONS 1 Anode 3 Anode 1 Cathode VS-APH3006-F3 Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 3 Anode VS-EPH3006-F3 The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. PRODUCT SUMMARY Package TO-247AC, TO-247AC modified IF(AV) 30 A VR 600 V VF at IF 2.65 V trr (typ.) 27 ns TJ max. 175 °C Diode variation Single die The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 112 °C 30 Non-repetitive peak surge current IFSM TC = 25 °C 180 Operating junction and storage temperatures TJ, TStg A - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 2.0 2.65 IR = 100 μA IF = 30 A, TJ = 150 °C - 1.4 1.8 VR = VR rated - - 30 TJ = 150 °C, VR = VR rated - - 300 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 20 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Document Number: 93571 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-APH3006-F3, VS-EPH3006-F3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 26 35 TJ = 25 °C - 26 - TJ = 125 °C UNITS ns - 70 - - 3.5 - - 7.6 - TJ = 25 °C - 50 - TJ = 125 °C - 280 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case RthJC - 0.7 1.1 °C/W Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 5.5 - - 0.2 - oz. - 2.4 (20) kgf · cm (lbf · in) Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight 1.2 (10) Mounting torque Marking device www.vishay.com 2 Case style TO-247AC APH3006 Case style TO-247AC modified EPH3006 g For technical questions within your region, please contact one of the following: Document Number: 93571 [email protected], [email protected], [email protected] Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-APH3006-F3, VS-EPH3006-F3 Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors 1000 1000 175 °C Reverse Current - IR (μA) 100 125 °C 10 100 °C 1 75 °C 0.1 50 °C 25 °C 0.01 0.001 TJ = 175 °C 0.0001 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 10 TJ = 150 °C Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 100 150 °C TJ = 25 °C 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 10 1 3.5 0 100 Forward Voltage Drop - VFM (V) 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 10 1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics Document Number: 93571 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-APH3006-F3, VS-EPH3006-F3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® 80 180 RMS Limit 160 Average Power Loss (W) Allowable Case Temperature (°C) 170 150 140 130 120 DC 110 100 60 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 40 20 90 0 80 0 10 20 30 40 0 50 5 10 15 20 25 30 35 40 45 Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics 900 90 800 80 700 IF = 30 A, 125 °C 70 600 IF = 30 A, 125 °C 60 trr (nC) trr (ns) 500 50 400 40 300 IF = 30 A, 25 °C 30 200 IF = 30 A, 25 °C 20 10 typical value typical value 10 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery vs. dIF/dt www.vishay.com 4 0 100 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt For technical questions within your region, please contact one of the following: Document Number: 93571 [email protected], [email protected], [email protected] Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-APH3006-F3, VS-EPH3006-F3 Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93571 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-APH3006-F3, VS-EPH3006-F3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- E P H 30 06 -F3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast MUR series • A = Single diode • E = Single diode (modified) 3 - P = TO-247AC 4 - H = Hyperfast recovery time 5 - Current code (30 = 30 A) 6 - Voltage code (06 = 600 V) 7 - F3 = RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-APH3006-F3 25 500 Antistatic plastic tube VS-EPH3006-F3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com 6 TO-247AC www.vishay.com/doc?95223 TO-247AC modified www.vishay.com/doc?95253 TO-247AC www.vishay.com/doc?95007 TO-247AC modified www.vishay.com/doc?95442 For technical questions within your region, please contact one of the following: Document Number: 93571 [email protected], [email protected], [email protected] Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Part Marking Information www.vishay.com Vishay Semiconductors TO-247AC modified E Example: Part number xxxxxxx (1) V Z119X A C Assembly lot code This is a xxxxxxx (1) with assembly lot code AC, assembled on WW 19, 2011 in the assembly line ”X” Product version (optional): Z (replaced according below table) Date code: Year 1 = 2011 Week 19 Line X Note (1) If part number contain “H” as last digit, product is AEC-Q101 qualified ENVIRONMENTAL NAMING CODE (Z) PRODUCT DEFINITION A Termination lead (Pb)-free Revision: 09-Aug-11 B Totally lead (Pb)-free E RoHS compliant and termination lead (Pb)-free F RoHS compliant and totally lead (Pb)-free M Halogen-free, RoHS compliant and termination lead (Pb)-free N Halogen-free, RoHS compliant and totally lead (Pb)-free G Green Document Number: 95442 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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