APTML202UM18R010T3AG VDSS = 200V RDSon = 18mΩ typ @ Tj = 25°C ID = 109A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 28 27 26 25 • • 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 • • • • Direct mounting to heatsink (isolated package) easy series and parallels combinations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant 10 11 12 Pins 13/14 ; 29/30 ; 31/32 must be shorted together Absolute maximum ratings (per leg) IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation n Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 109* 81* 400 ±30 19 480 100 50 3000 Unit V A November, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ * Output current per leg must be limited to 44A @ TC=25°C and 31A @ TC=80°C to not exceed the shunt specification. n In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–3 APTML202UM18R010T3AG – Rev 0 Symbol VDSS APTML202UM18R010T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VDS = 200V ; VGS = 0V Tj = 25°C VDS = 160V ; VGS = 0V Tj = 125°C VGS = 10V, ID = 50A VGS = VDS, ID = 2.5mA VGS = ±30 V Typ Max 25 250 19 4 ±100 Unit Typ 9880 2320 700 Max Unit Typ 10 2 Max 18 2 µA mΩ V nA Dynamic Characteristics (per leg) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min pF Shunt Electrical Characteristics (per leg) Symbol Characteristic Resistance value Rsh Tsh Tolerance Psh Load capacity Ish Current capacity Min TC=25°C TC=80°C TC=25°C TC=80°C 20 10 44 31 Unit mΩ % W A Temperature sensor PTC Symbol R25 R100/R25 R-55/R25 B Characteristic Resistance @ 25°C Resistance ratio Resistance ratio Temperature coefficient Min 1980 1.676 0.48 Tamb=100°C & 25°C Tamb=-55°C & 25°C Typ 1.696 0.49 7900 Max 2020 1.716 0.50 Unit Ω ppm/K Characteristic Junction to Case Thermal Resistance Min MOSFET (per leg) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 4000 -40 -40 -40 2.5 Typ Max 0.26 150 125 100 4.7 110 Unit °C/W V °C N.m g 2–3 APTML202UM18R010T3AG – Rev 0 Symbol RthJC VISOL TJ TSTG TC Torque Wt November, 2009 Thermal and package characteristics APTML202UM18R010T3AG SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Typical Performance Curve (linear mode) (per leg) Power vs Drain source voltage Drain Current vs Drain source voltage 400 100 TJ=125°C 300 November, 2009 10 350 250 200 1 0 50 100 150 200 0 50 100 150 200 Drain Source Voltage (V) Drain Source Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3–3 APTML202UM18R010T3AG – Rev 0 Dissipated Power (W) Drain Current (A) TJ=125°C