MICROSEMI APTM60A11FT1G

APTM60A11FT1G
VDSS = 600V
RDSon = 90mΩ typ @ Tj = 25°C
ID = 40A @ Tc = 25°C
Phase leg
MOSFET Power Module
5
6
Application
11
•
•
•
•
Q1
7
8
Features
3
4
Q2
NTC
•
9
10
1
2
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
12
•
•
•
Power MOS 8™ FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
600
40
30
245
±30
110
390
33
Unit
V
A
February, 2010
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
APTM60A11FT1G – Rev 0
Symbol
VDSS
APTM60A11FT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS = 600V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 33A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Min
3
Typ
90
4
Max
100
1000
110
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 33A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
10552
1210
108
pF
330
nC
70
140
75
Resistive switching @ 25°C
VGS = 15V
VBus = 400V
ID = 33A
RG = 2.2Ω
85
ns
225
70
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 33A
IS = - 33A
VR = 100V
diS/dt = 100A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.27
3.32
Max
40
30
1
30
250
460
Unit
A
V
V/ns
ns
µC
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2–5
APTM60A11FT1G – Rev 0
February, 2010
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 33A di/dt ≤ 1000A/µs VDD ≤ 400V Tj ≤ 125°C
APTM60A11FT1G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
0.32
150
125
100
4.7
80
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT =
Min
Typ
50
3952
Max
Unit
kΩ
K
R25
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦
⎣
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–5
APTM60A11FT1G – Rev 0
February, 2010
SP1 Package outline (dimensions in mm)
APTM60A11FT1G
Typical Performance Curve
Low Voltage Output Characteristics
Low Voltage Output Characteristics
100
150
TJ=25°C
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10V
125
100
TJ=125°C
75
50
25
VGS=7 &8V
80
6V
60
40
5.5V
20
TJ=125°C
0
0
0
5
10
15
20
0
15
20
25
30
100
3
VGS=10V
ID=33A
2
1.5
1
0.5
0
80
TJ=125°C
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5
duty cycle
60
40
TJ=25°C
20
0
25
50
75
100
125
150
0
1
TJ, Junction Temperature (°C)
3
4
5
C, Capacitance (pF)
VDS=120V
ID=33A
TJ=25°C
6
7
Capacitance vs Drain to Source Voltage
100000
12
10
2
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source
VDS=300V
8
6
VDS=480V
4
2
0
Ciss
10000
Coss
1000
100
Crss
10
50
100
150 200
250
300
350
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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4–5
February, 2010
1
0
APTM60A11FT1G – Rev 0
VGS, Gate to Source Voltage
10
Transfert Characteristics
Normalized RDSon vs. Temperature
2.5
5
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
VDS, Drain to Source Voltage (V)
APTM60A11FT1G
ISD, Reverse Drain Current (A)
Drain Current vs Source to Drain Voltage
120
100
80
TJ=125°C
60
40
TJ=25°C
20
0
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.15
0.5
0.3
0.1
0.05
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTM60A11FT1G – Rev 0
February, 2010
rectangular Pulse Duration (Seconds)