= .---- =_ ‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic MetaUCeramic Package ,L”“-.“.” Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units V ES 63 V Collector-EmitterVoltage Emitter-Base Voltage I vm Collector Current (Peak) Total Power Dissipation 1 JunctionTemperature StorageTemperature I 3.0 I v ‘c 12.5 A PTPlT 575 W 1 1 :2.54=.25) T, T,,, Electrical Characteristics L&et& 1 200 1 -65 to+200 Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance t 1 “C I 1 “C 1 <1.52-'.CS) INCHCS 1 Min 1 Max Test Conditions 1 Units 1 - V I,=40 mA ICES 7.5 mA VcE=36 V R WJCI 0.3 “WW V,,=36 V, P,N=26 W, F=2.7,2.9 GHz BV,,, 65 P ^,_ 130 - W V-,=36 V, P,,=26 W, F=2.7.2.9 GHz Power Gain GP 7.0 - dB V,,=36 V, P,,=26 W, F=2.7,2.9 GHz Collector Efficiency llr 40 - % V,,=36 V, P,,=26 W, F=2.7,2.9 GHr Input Return Loss RL 6 - dB Vcc=36 V, P,,=26 W, F=2.7,2.9 GHz Overdrive Stabilitv OD-S - 1.0 dB VP,=36 V, P,,=26 W, F=2.7.2.9 GHz Load Mismatch Tolerance VSWR-T - 3:l - V,,=36 V, P,,=26 W, F=2.7.2.9 GHz Load Mismatch Stablility VSWR-S - 2:l - Vccs36 V, P,,=26 W, F=2.7,2.9 GHz Outout Power r~ ““I , This Data Sheet Contains Typical Electrical Specifications -- ,. Which May Change Prior to Final Introduction 9-12 North America: 5.005’ at 25°C 1 Svmbol Collector-Emitter I M/A-COM, Tel. (800) 366-2266 Fax (800) 618-8883 . Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020