an AMP company CW Power Transistor, 30 - 400 MHz 85W PHOI 04-85 v2.00 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 85 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Proven in Thousands of ARC-182 Airborne Radios l l l l l l l .a20 c’ :23.83) Absolute Maximum Ratings at 25°C I Parameter ) Symbol 1 Rating ( Units Collector-Emitter Voltage V,,, 65 V Emitter-Base Voltage VES0 4.0 V I Collector Current (Peak) I lc ( IO I A Power Dissipation PO 194 w JunctionTemperature TJ 200 “C StorageTemperature T ST0 -40 to +125 “C Thermal Resistance I 8.K I 0.9 1 I COATING I “WJv I LlNLiSS Electrical Characteristics ( Symbol ( Collector-Emitter Breakdown Voltage 1 BV,,, 1 ‘CES DC Forward Current Gain hcc I Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance 1 Min 20 PIN I - I NJTEII, TOLERANCES ARE (MILLIPIETERS - 1 Units I +,,3nH) 1 v I I,=10 mA, v,,=o.o v ) v I I,=IO mA, I,=O.OA 4 mA 80 - 16 ) W I I v,,=30 v V-,=5.0 V, 1,=2.0 A ) V,,=27 V, I,,=50 mA, Pod85 - dB V,,=27 V, I,,=50 mA, PO,,,=85W. F=400 MHz % 45 - % V,,=27 V, I,,=50 mA, Pob,=85 W, F=400 MHz 9 - dB !I,,=27 V, I,,=50 mA, P,~85 - I 3:l I - ) V,,=27V, 1,,=5omA, ~~~85 I W, F=400 MHZ 7.3 VBWH-T I I lest Conditions GP RL I 1 pax I 65 I I 4.0 I BVm Collector-Emitter Leakage Current 1 Input Power 3TH;RWISi at 25°C I Parameter I Base-Emitter Breakdown Voltage -, W, F=400 MHz w, F=~OOMHZ SpecificationsSubjectto ChangeWithoutNotice. 9-86 North America: MIA-COM, Inc. Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020