BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration BAT64-05 BAT 64-04 BAT64-06 ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAT 64 63s Q62702-A879 1=A 3=C SOT-23 BAT 64-04 64s Q62702-A961 1=A 2=C 3 = C/A SOT-23 BAT 64-05 65s Q62702-A962 1=A 2=A 3 = C/C SOT-23 BAT 64-06 66s Q62702-A963 1=C 2=C 3 = A/A SOT-23 Maximum Ratings Parameter Symbol Values Diode reverse voltage VR 40 V Forward current IF 250 mA Average forward current (50/60Hz, sinus) IFAV 120 Surge forward current (t ≤ 10ms) IFSM 800 Total Power dissipation Ptot TS = 61 °C Unit mW 250 Junction temperature Tj Storage temperature Tstg 150 °C - 55 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 495 RthJS ≤ 355 K/W 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR µA VR = 25 V, TA = 25 °C - - 2 VR = 25 V, TA = 85 °C - - 200 IF = 1 mA - 320 350 mV IF = 10 mA - 385 430 V IF = 30 mA - 440 520 IF = 100 mA - 570 750 Forward voltage VF AC Characteristics Diode capacitance CT VR = 1 V, f = 1 MHz pF - Forward Current IF = f(VF) 4 6 Reverse current IR = f (VR) TA = Parameter Semiconductor Group 2 Jan-31-1997 BAT 64 Diode capacitance CT = f (VR) f = 1MHz Forward current IF = f (TA*;TS) * Package mounted on epoxy BAT 64 Forward current IF = f (TA*;TS) * Package mounted on epoxy BAT 64-04... (IF per diode) Semiconductor Group 3 Jan-31-1997