Diodes SMD Type Silicon Schottky Diodes BAS125 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 protection,bias isolation and clamping applications 0.55 For low-loss, fast-recovery, meter 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Integrated diffused guard ring +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low forward voltage 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Values Unit Reverse voltage VR 25 V Forward current IF 100 mA Surge forward current IFRM Total power dissipation P tot Junction temperature Tj Storage temperature range t 10 ms Ts < 25 (Note 3) R th JA Junction-soldering point R th JS mA 250 mW 150 T stg Junction-ambient 500 -55 to +150 Note 2 < 725 K/W < 565 K/W Note 1. For detailed information see chapter Package Outlines. 2.Package mounted on alumina 15 mm 16.7 mm 0.7 mm. 3.450 mW per package. www.kexin.com.cn 1 Diodes SMD Type Silicon Schottky Diodes BAS125 series Electrical Characteristics Ta = 25 Parameter Symbol Reverse voltage Conditions IR Forward voltage VF Max 1 VR = 25 V 10 IF = 1 mA 385 IF = 10 mA 530 IF = 35 mA 800 Diode capacitance CT VR = 0, f= 10 kHz Differential forward resistance RF IF = 5mA, f= 10 kHz Type BAS125 BAS125-04 BAS125-05 BAS125-06 Marking 13 14 15 16 www.kexin.com.cn Typ VR = 20 V Marking 2 Min A 410 mV 900 1.1 15 Unit pF