Transistors SMD Type PNP Silicon AF an Swiching Transistors BCX42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High breakdown voltage 1 Low collector-emitter saturation voltage 0.55 For general AF applications +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 125 V Collector-emitter voltage VCEO 125 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Peak collector current ICM 1 A IB 100 mA Peak base current IBM 200 mA Total power dissipation mW Base current Ptot 330 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Junction - soldering point RthJS 215 K/W www.kexin.com.cn 1 Transistors SMD Type BCX42 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit V(BR)CEO IC = 10 mA, IB = 0 125 V Collector-base breakdown voltage V(BR)CBO IC = 100 ìA, IB = 0 125 V Emitter-base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 5 V Collector cutoff current ICBO Emitter cutoff current IEBO Collector cutoff current ICEO DC current gain * hFE VCB = 100 V, IE = 0 100 nA VCB = 100 V, IE = 0 , TA = 150 20 ìA VEB = 4 V, IC = 0 100 nA VCE = 100 V , TA = 85 10 ìA VCE = 100 V , TA = 125 75 ìA IC = 100 ìA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V 25 63 40 Collector-emitter saturation voltage * VCE(sat) IC = 300 mA, IB = 30 mA 0.9 V Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 1.4 V Transition frequency * Pulse test: t Ccb 300ìs, D = 2%. Marking Marking www.kexin.com.cn * fT Collector-base capacitance 2 Testconditons Collector-emitter breakdown voltage DKs IC = 20 mA, VCE = 5 V, f = 20 MHz 150 MHz VCB = 10 V, f = 1 MHz 12 pF