Transistors IC SMD Type Product specification BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol BCW65 BCW66 Unit Collector-base voltage Parameter VCBO 60 75 V Collector-emitter voltage VCEO 32 45 V Emitter-base voltage VEBO 5 5 V 800 Collector current IC Peak collector current ICM 1 A IB 100 mA Peak base current IBM 200 mA Total power dissipation,TS = 79 mW Base current Ptot 330 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Junction - soldering point RthJS http://www.twtysemi.com 215 [email protected] mA K/W 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BCW65,BCW66 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter breakdown voltage BCW65 Testconditons Min V(BR)CEO IC = 10 mA, IB = 0 BCW66 BCW65 Collector-base breakdown voltage BCW65 5 20 VCB = 45 V, IE = 0 20 VCB = 32 V, IE = 0 , TA = 150 20 VCB = 45 V, IE = 0 , TA = 150 20 IEBO VEB = 4 V, IC = 0 20 hFE IC = 100 ìA, VCE = 10 V ICBO A/F DC current gain * hFE-grp. B/G 75 hFE IC = 10 mA, VCE = 1 V 110 180 A/F hFE-grp. B/G hFE IC = 100 mA, VCE = 1 V C/H Collector-emitter saturation voltage * Base-emitter saturation voltage VCE(sat) * VBE(sat) Transition frequency fT 100 160 250 160 250 400 250 350 630 IC = 100 mA, IB = 10 mA 0.3 IC = 500 mA, IB = 50 mA 0.7 IC = 100 mA, IB = 10 mA 1.25 IC = 500 mA, IB = 50 mA 2 IC = 50 mA, VCE = 5 V, f = 100 MHz 170 Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 6 Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz 60 * Pulse test: t nA 50 C/H DC current gain * ìA 80 A/F hFE-grp. B/G nA 35 C/H DC current gain * V VCB = 32 V, IE = 0 ICBO BCW66 Emitter cutoff current V 75 BCW66 Collector cutoff current Unit V 60 V(BR)CBO IC = 10 ìA, IE = 0 V(BR)EBO IE = 10 ìA, IC = 0 BCW65 Max 45 BCW66 Emitter-base breakdown voltage Typ 32 V MHz pF 300ìs, D = 2%. hFE Classification BCW65 TYPE Rank A B C Marking EAs EBs ECs BCW66 TYPE Rank F G H Marking EFs EGs EHs http://www.twtysemi.com [email protected] 4008-318-123 2 of 2