TYSEMI BCX68-10

Transistors
SMD Type
Product specification
BCX68
SOT-89
Unit: mm
+0.1
4.50-0.1
+0.1
1.50-0.1
+0.1
2.50-0.1
Features
+0.1
4.00-0.1
+0.1
1.80-0.1
High collector current.
+0.1
3.00-0.1
+0.1
0.40-0.1
+0.1
2.60-0.1
Low collector-emitter saturation voltage.
+0.1
0.44-0.1
+0.1
0.80-0.1
+0.1
0.53-0.1
+0.1
0.48-0.1
High current gain.
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICM
2
A
IB
100
mA
Peak base current
IBM
200
mA
Total power dissipation
Ptot
1
W
Tj
150
Storage temperature
Tstg
-65 to +150
Junction - soldering point
RthJS
Base current
Junction temperature
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[email protected]
20
K/W
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
BCX68
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
V(BR)CEO
IC = 30 mA, IB = 0
20
V
Collector-base breakdown voltage
V(BR)CBO
IC = 10 ìA, IB = 0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 ìA, IC = 0
5
V
Collector cutoff current
ICBO
DC current gain *
hFE
VCB = 25 V, IE = 0
100
nA
VCB = 25 V, IE = 0 , TA = 150
100
ìA
IC = 500 mA, VCE = 1 V
50
85
DC current gain *
hFE
DC current gain *
hFE
Collector-emitter saturation voltage *
Base-emitter voltage
VCE(sat)
VBE(ON)
*
IC = 500 mA, VCE = 1 V
IC = 1A, VCE = 1 V
375
85
100
160
100
160
250
160
250
375
60
IC = 1 A, IB = 100 mA
0.5
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
Transition frequency
* Pulse test: t
fT
V
0.6
1
IC = 100 mA, VCE = 5 V, f = 20 MHz
100
MHz
300ìs, D = 2%.
hFE Classification
TYPE
BCX68
BCX68-10
BCX68-16
BCX68-25
Marking
CA
CB
CC
CD
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2