Transistors SMD Type PNP Silicon AF Transistors KC808A(BC808A) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -500 mA Peak collector current ICM -1 A IB -100 mA Total power dissipation Ptot 310 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Base current Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-to-base breakdown voltage VCBO IC = -10 µA, IE = 0 -30 V Collector-to-emitter breakdown voltage VCEO IC = -10 mA, IB = 0 -25 V Emitter-to-base breakdown voltage VEBO IE = -10 µA, IC = 0 -5 V Collector cutoff current ICBO Emitter cutoff current IEBO VCB = -25 V, IE = 0 -100 nA VCB = -25 V, IE = 0 , TA = 150 -50 A -100 nA VEB = -4 V, IC = 0 KC808A-16 DC current gain * KC808A-25 hFE IC = -100 mA, VCE = -1 V KC808A-40 100 160 250 160 250 400 250 350 630 Collector saturation voltage * VCE(sat) IC = -500 mA, IB = -50 mA -0.7 V Base to emitter voltage * VBE(sat) IC = -500 mA, IB = -50 mA -1.2 V Collector-base capacitance CCb VCB = -10 V, f = 1 MHz 10 Emitter-base capacitance Ceb VEB = -0.5 V, f = 1 MHz 60 pF IC = -50 mA, VCE = -5 V, f = 100 MHz 200 MHz Transition frequency * Pulsed: PW fT 350 ìs, duty cycle pF 2% Marking NO. KC808A-16 KC808A-25 KC808A-40 Marking 5E 5F 5G www.kexin.com.cn 1