BC856 THRU BC859 Small Signal Transistors (PNP) FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in .122 (3.1) .118 (3.0) .016 (0.4) ♦ These transistors are subdivided into three groups A, B .056 (1.43) .052 (1.33) 3 and C according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC858 and BC859 can be supplied in all three groups. The BC859 is a low noise type. .016 (0.4) ♦ As complementary types, the NPN transistors .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 thick- and thin-film circuits. Top View BC846 … BC849 are recommended. MECHANICAL DATA .102 (2.6) .094 (2.4) .016 (0.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code Type Dimensions in inches and (millimeters) BC856A B BC857A B C BC858A B C Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. Marking 3A 3B 3E 3F 3G 3J 3K 3L Type Marking BC859A B C 4A 4B 4C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage BC856 BC857 BC858, BC859 –VCBO –VCBO –VCBO 80 50 30 V V V Collector-Emitter Voltage BC856 BC857 BC858, BC859 –VCES –VCES –VCES 80 50 30 V V V Collector-Emitter Voltage BC856 BC857 BC858, BC859 –VCEO –VCEO –VCEO 65 45 30 V V V Emitter-Base Voltage –VEBO 5 V Collector Current –IC 100 mA Peak Collector Current –I CM 200 mA Peak Base Current –I BM 200 mA Peak Emitter Current I EM 200 mA Power Dissipation at TSB = 50 °C Ptot 3101) mW Junction Temperature Tj 150 °C Storage Temperature Range TS – 65 to +150 °C 4/98 BC856 THRU BC859 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit hfe hfe hfe hie hie hie hoe hoe hoe – – – 1.6 3.2 6 – – – 220 330 600 2.7 4.5 8.7 18 30 60 – – – 4.5 8.5 15 30 60 110 – – – hre hre hre – – – 1.5 · 10–4 2 · 10–4 3 · 10–4 – – – – – – hFE hFE hFE – – – 90 150 270 – – – – – – hFE hFE hFE 110 200 420 180 290 520 220 450 800 Thermal Resistance Junction to Substrate Backside RthSB – – 3201) K/W Thermal Resistance Junction to Ambient Air RthJA – – 4501) K/W Collector Saturation Voltage at –IC = 10 mA, –IB = 0.5 mA at –IC = 100 mA, –IB = 5 mA –VCEsat –VCEsat – – 90 250 300 650 mV mV Base Saturation Voltage at –IC = 10 mA, –IB = 0.5 mA at –IC = 100 mA, –IB = 5 mA –VBEsat –VBEsat – – 700 900 – – mV mV Base-Emitter Voltage at –VCE = 5 V, –IC = 2 mA at –VCE = 5 V, –IC = 10 mA –VBE –VBE 600 – 660 – 750 800 mV mV Collector-Emitter Cutoff Current BC856 at –VCE = 80 V at –VCE = 50 V BC857 at –VCE = 30 V BC858, BC859 at –VCE = 80 V, Tj = 125 °C BC856 at –VCE = 50 V, Tj = 125 °C BC857 at –VCE = 30 V, Tj = 125 °C BC858, BC859 at –VCB = 30 V at –VCB = 30 V, Tj = 150 °C –ICES –ICES –ICES –ICES –ICES –ICES –ICBO –ICBO – – – – – – – – 0.2 0.2 0.2 – – – – – 15 15 15 4 4 4 15 5 nA nA nA µA µA µA nA µA fT – 150 – MHz h-Parameters at –VCE = 5 V, –IC = 2 mA, f = 1 kHz Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain at –VCE = 5 V, –IC = 10 µA Current Gain Group A B C at –VCE = 5 V, –IC = 2 mA Current Gain Group A B C Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 100 MHz 1) Device on fiberglass substrate, see layout kΩ kΩ kΩ µS µS µS – – – BC856 THRU BC859 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit CCBO – – 6 pF Noise Figure at –VCE = 5 V, –IC = 200 µA, RG = 2 kΩ, f = 1 kHz, ∆f = 200 Hz BC856, BC857, BC858 BC859 F F – – 2 1 10 4 dB dB Noise Figure at –VCE = 5 V, –IC = 200 µA, RG = 2 kΩ, f = 30…15000 Hz BC859 F – 1.2 4 dB Collector-Base Capacitance at –VCB = 10 V, f = 1 MHz .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .03 (0.8) .47 (12) 0.2 (5) .06 (1.5) Dimensions in inches (millimeters) .20 (5.1) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859 Collector-base cutoff current versus junction temperature nA 4 10 BC856...BC859 3 10 -ICBO 2 10 10 Test voltage -VCBO : equal to the given maximum value -VCEO 1 typical maximum -1 10 0 200 °C 100 Tj RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859 Collector saturation voltage versus collector current Collector current versus base-emitter voltage BC856...BC859 mA 102 -V CE = 5 V Tamb = 25 °C BC856...BC859 V 0.5 -IC -IB = 20 5 4 3 -IC 0.4 2 -VCEsat 10 0.3 5 4 3 2 0.2 1 Tamb = 100 °C 5 4 25 °C 0.1 3 -50 °C 2 10-1 0 0 0.5 1V -VBE 10-1 2 5 1 2 5 10 2 -IC 5 102 mA RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859