BC807, BC808 Small Signal Transistors (PNP) FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16, 2 .016 (0.4) -25 and -40 according to their current gain. .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 1 for switching, AF driver and amplifier applications. ♦ As complementary types, the NPN transistors BC817 and BC818 are recommended. MECHANICAL DATA .102 (2.6) .094 (2.4) .016 (0.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. Type BC807-16 -25 -40 BC808-16 -25 -40 Marking 5A 5B 5C 5E 5F 5G MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Collector-Emitter Voltage BC807 BC808 –VCES –VCES 50 30 V V Collector-Emitter Voltage BC807 BC808 –VCEO –VCEO 45 25 V V Emitter-Base Voltage –VEBO 5 V Collector Current –IC 500 mA Peak Collector Current –ICM 1000 mA Peak Base Current –IBM 200 mA Peak Emitter Current IEM 1000 mA Power Dissipation at TSB = 50 °C Ptot 3101) mW Junction Temperature Tj 150 °C Storage Temperature Range TS – 65 to +150 °C 1) Device on fiberglass substrate, see layout 4/98 BC807, BC808 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE hFE 100 160 250 60 100 170 – – – – – – 250 400 600 – – – – – – – – – Thermal Resistance Junction Substrate Backside RthSB – – 3201) K/W Thermal Resistance Junction to Ambient Air RthJA – – 4501) K/W Collector Saturation Voltage at –IC = 500 mA, –IB = 50 mA –VCEsat – – 0.7 V Base-Emitter Voltage at –VCE = 1 V, –IC = 300 mA –VBE – – 1.2 V –ICES –ICES –ICES – – – – – – 100 100 5 nA nA µA Emitter-Base Cutoff Current at –VEB = 4 V –IEBO – – 100 nA Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 50 MHz fT – 100 – MHz Collector-Base Capacitance at –VCB = 10 V, f = 1 MHz CCBO DC Current Gain at –VCE = 1 V, –IC = 100 mA Current Gain Group-16 -25 -40 -16 at –VCE = 1 V, –IC = 300 mA -25 -40 Collector-Emitter Cutoff Current at –VCE = 45 V at –VCE = 25 V at –VCE = 25 V, Tj = 150 °C 1) BC807 BC808 Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .03 (0.8) .47 (12) 0.2 (5) .06 (1.5) Dimensions in inches (millimeters) .20 (5.1) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) 12 pF RATINGS AND CHARACTERISTIC CURVES BC807, BC808 RATINGS AND CHARACTERISTIC CURVES BC807, BC808 RATINGS AND CHARACTERISTIC CURVES BC807, BC808