BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage BC856 BC857 BC858, BC859 Collector Emitter Voltage BC856 BC857 BC858, BC859 Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ PARAMETER DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group SYMBOL -VCBO -VCEO -VEBO -IC -ICM Ptot TJ Tstg SYMBOL MIN. UNIT V V V mA mA mW ℃ ℃ MAX. UNIT hFE 125 220 420 220 475 800 - -ICBO - 15 nA BC856 BC857 BC858, BC859 -V(BR)CBO 80 50 30 - V BC856 BC857 BC858, BC859 -V(BR)CES 80 50 30 - V BC856 BC857 BC858, BC859 -V(BR)CEO 65 45 30 - V Emitter Base Breakdown Voltage at -IE = 1 µA Collector Emitter Saturation Voltage at -IC = 10 mA, - IB = 0.5 mA at -IC = 100 mA, - IB = 5 mA Base Emitter On Voltage at -IC = 2 mA, - VCE = 5 V at -IC = 10 mA, - VCE = 5 V Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -IC = 200 µA, -VCE = 5 V, BC856, BC857, BC858 RG = 2 KΩ, f = 1 KHz BC859 at -IC = 200 µA, -VCE = 5 V, BC859 RG = 2 KΩ, f = 30~15 KHz -V(BR)EBO 5 - V -VCE(sat) - 0.3 0.65 V -VBE(sat) 0.6 - 0.75 0.82 V fT 100 - MHz Cob - 6 pF NF - 10 4 4 dB Collector Base Cutoff Current at -VCB = 30 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Website: www.kingtronics.com A B C VALUE 80 50 30 65 45 30 5 100 200 200 150 - 65 to + 150 Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1 BC856~BC859 PNP Silicon Epitaxial Transistors RATINGS AND CHARACTERISTIC CURVES BC856 THUR BC859 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2