BC546 thru BC549 Small Signal Transistors (NPN) TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) max. ∅ 0.022 (0.55) Features • NPN Silicon Epitaxial Planar Transistors • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549 is a low-noise type and available in groups B and C. As complementary types the PNP transistors BC556...BC559 are recommended. • On special request, these transistors are also manufactured in the pin configuration TO-18. Mechanical Data 0.098 (2.5) Dimensions in inches and (millimeters) Bottom View Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container E7/4K per Ammo tape Maximum Ratings & Thermal Characteristics Parameters Ratings at 25°C ambient temperature unless otherwise specified. Symbols Value Units Collector-Base Voltage BC546 BC547 BC548, BC549 VCBO 80 50 30 V Collector-Emitter Voltage BC546 BC547 BC548, BC549 VCES 80 50 30 V Collector-Emitter Voltage BC546 BC547 BC548, BC549 VCEO 65 45 30 V Emitter-Base Voltage BC546, BC547 BC548, BC549 VEBO 6 5 V IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Peak Emitter Current -IEM 200 mA Collector Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RΘJA (1) mW (1) °C/W 500 250 Junction Temperature Tj 150 °C Storage Temperature Range TS – 65 to +150 °C Notes: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. 2/28/00 BC546 thru BC549 Small Signal Transistors (NPN) Electrical Characteristics (T Parameter Current gain group Small Signal Current Gain Current gain group Input Impedance Current gain group Output Admittance Current gain group Reverse Voltage Transfer Ratio Current gain group Current gain group DC Current Gain Current gain group J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit A B C hfe VCE = 5 V, IC = 2 mA, f = 1 kHz — — — 220 330 600 — — — — A B C hie VCE = 5 V, IC = 2 mA, f = 1 kHz 1.6 3.2 6 2.7 4.5 8.7 4.5 8.5 15 kΩ A B C hoe VCE = 5 V, IC = 2 mA, f = 1kHz — — — 18 30 60 30 60 110 µS hre VCE = 5 V, IC = 2 mA, f = 1kHz — — — 1.5 • 10-4 2 • 10-4 3 • 10-4 — — — — VCE = 5 V, IC = 10 µA — — — 90 150 270 — — — VCE = 5 V, IC = 2 mA 110 200 420 180 290 500 220 450 800 VCE = 5 V, IC = 100 mA — — — 120 200 400 — — — A B C A B C A B C hFE A B C — Collector Saturation Voltage VCEsat IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA — — 80 200 200 600 mV Base Saturation Voltage VBEsat IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA — — 700 900 — — mV VBE VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA 580 — 660 — 700 720 mV VCE = 80 V VCE = 50 V VCE = 30 V VCE = 80 V, Tj = 125°C VCE = 50 V, Tj = 125°C VCE = 30 V, Tj = 125°C — — — — — — 0.2 0.2 0.2 — — — 15 15 15 4 4 4 nA nA nA µA µA µA fT VCE = 5 V, IC = 10 mA, f = 100 MHz — 300 — MHz Collector-Base Capacitance CCBO VCB = 10 V, f = 1 MHz — 3.5 6 pF Emitter-Base Capacitance CEBO VEB = 0.5 V, f = 1 MHz — 9 — pF — 2 10 F VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 1 kHz, ∆f = 200 Hz — 1.2 4 — 1.4 4 Base-Emitter Voltage Collector-Emitter Cutoff Current BC546 BC547 BC548, BC549 BC546 BC547 BC548, BC549 Gain-Bandwidth Product Noise Figure BC546, BC547 BC548 BC549 BC549 ICES VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 30...15000 Hz dB BC546 thru BC549 Small Signal Transistors (NPN) Ratings and Characteristic Curves BC546 thru BC549 Small Signal Transistors (NPN) Ratings and Characteristic Curves BC546 thru BC549 Small Signal Transistors (NPN) Ratings and Characteristic Curves