BC546 THRU BC549 Small Signal Transistors (NPN) TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ NPN Silicon Epitaxial Planar Transistors ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549 is a low-noise type and available in groups B and C. As complementary types, the PNP transistors BC556 … BC559 are recommended. max. ∅ .022 (0.55) ♦ On special request, these transistors are also .098 (2.5) manufactured in the pin configuration TO-18. E C MECHANICAL DATA B Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage BC546 BC547 BC548, BC549 VCBO VCBO VCBO 80 50 30 V V V Collector-Emitter Voltage BC546 BC547 BC548, BC549 VCES VCES VCES 80 50 30 V V V Collector-Emitter Voltage BC546 BC547 BC548, BC549 VCEO VCEO VCEO 65 45 30 V V V Emitter-Base Voltage BC546, BC547 BC548, BC549 VEBO VEBO 6 5 V V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Peak Emitter Current –IEM 200 mA Power Dissipation at Tamb = 25 °C Ptot 5001) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C 1) 4/98 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case BC546 THRU BC549 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit hfe hfe hfe hie hie hie hoe hoe hoe – – – 1.6 3.2 6 – – – 220 330 600 2.7 4.5 8.7 18 30 60 – – – 4.5 8.5 15 30 60 110 – – – kΩ kΩ kΩ µS µS µS hre hre hre – – – 1.5 · 10–4 2 · 10–4 3 · 10–4 – – – – – – hFE hFE hFE – – – 90 150 270 – – – – – – hFE hFE hFE 110 200 420 180 290 500 220 450 800 – – – hFE hFE hFE – – – 120 200 400 – – – – – – Thermal Resistance Junction to Ambient Air RthJA – – 2501) K/W Collector Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VCEsat VCEsat – – 80 200 200 600 mV mV Base Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VBEsat VBEsat – – 700 900 – – mV mV Base-Emitter Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA VBE VBE 580 – 660 – 700 720 mV mV BC546 BC547 ICES ICES – – 0.2 0.2 15 15 nA nA BC548, BC549 ICES – 0.2 15 nA BC546 BC547 ICES ICES – – – – 4 4 µA µA h-Parameters at VCE = 5 V, IC = 2 mA, f = 1 kHz, Small Signal Current Gain Current Gain Group A B C Current Gain Group A Input Impedance B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain at VCE = 5 V, IC = 10µA Current Gain Group A B C at VCE = 5 V, IC = 2 mA Current Gain Group A B C at VCE = 5 V, IC = 100 mA Current Gain Group A B C Collector-Emitter Cutoff Current at VCE = 80 V at VCE = 50 V at VCE = 30 V at VCE = 80 V, Tj = 125 °C at VCE = 50 V, Tj = 125 °C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case BC546 THRU BC549 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit ICES – – 4 4 µA µA Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz fT – 300 – MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz CCBO – 3.5 6 pF Emitter-Base Capacitance at VEB = 0.5 V, f = 1 MHz CEBO – 9 – pF F – 2 10 dB BC548 BC549 F – 1.2 4 dB BC549 F – 1.4 4 dB at VCE = 30 V, Tj = 125 °C BC548, BC549 Noise Figure at VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 1 kHz, ∆f = 200 Hz BC546, BC547 at VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 30…15000 Hz RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549