BAP55LX Silicon PIN diode Rev. 01 — 30 July 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features n n n n n High speed switching for RF signals Low diode capacitance Low forward resistance Very low series inductance For applications up to 3 GHz 1.3 Applications n RF attenuators and switches 2. Pinning information Table 1. Pin Discrete pinning Description 1 cathode 2 anode Simplified outline 1 2 Transparent top view [1] Symbol [1] sym006 The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package BAP55LX Name Description Version - leadless ultra small plastic package; 2 terminals; body 1 × 0.6 × 0.4 mm SOD882T BAP55LX NXP Semiconductors Silicon PIN diode 4. Marking Table 3. Marking Type number Marking code BAP55LX LC 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VR reverse voltage Conditions - 50 V IF forward current - 100 mA Ptot total power dissipation - 135 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Typ Unit 78 K/W Tsp = 90 °C 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point 7. Characteristics Table 6. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.95 1.1 V IR reverse current VR = 20 V - - 10 nA VR = 50 V - - 100 nA - 0.28 - pF Cd diode capacitance see Figure 1; f = 1 MHz; VR = 0 V rD diode forward resistance VR = 1 V - 0.23 - pF VR = 20 V - 0.18 0.28 pF IF = 0.5 mA - 3.3 4.5 Ω IF = 1 mA - 2.2 3.3 Ω IF = 10 mA - 0.8 1.2 Ω IF = 100 mA - 0.5 0.8 Ω see Figure 2; f = 100 MHz; BAP55LX_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 July 2007 2 of 8 BAP55LX NXP Semiconductors Silicon PIN diode Table 6. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions ISL isolation see Figure 3; VR = 0 V; Lins Lins Lins Lins insertion loss insertion loss insertion loss insertion loss Min Typ Max Unit f = 900 MHz - 19 - dB f = 1800 MHz - 14 - dB f = 2450 MHz - 12 - dB f = 900 MHz - 0.24 - dB f = 1800 MHz - 0.25 - dB f = 2450 MHz - 0.26 - dB f = 900 MHz - 0.17 - dB f = 1800 MHz - 0.18 - dB f = 2450 MHz - 0.19 - dB f = 900 MHz - 0.08 - dB f = 1800 MHz - 0.09 - dB f = 2450 MHz - 0.10 - dB f = 900 MHz - 0.05 - dB f = 1800 MHz - 0.07 - dB f = 2450 MHz - 0.08 - dB see Figure 4; IF = 0.5 mA; see Figure 4; IF = 1 mA; see Figure 4; IF = 10 mA; see Figure 4; IF = 100 mA; τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA - 0.27 - µs LS series inductance IF = 100 mA; f = 100 MHz - 0.4 - nH BAP55LX_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 July 2007 3 of 8 BAP55LX NXP Semiconductors Silicon PIN diode 001aag762 400 001aag763 102 Cd (fF) rD (Ω) 300 10 200 1 100 0 0 5 10 15 20 10−1 10−1 1 102 10 VR (V) If (mA) f = 1 MHz; Tj = 25 °C. f = 100 MHz; Tj = 25 °C. Fig 1. Diode capacitance as a function of reverse voltage; typical values Fig 2. Forward resistance as a function of forward current; typical values 001aag764 0 001aag765 0 (1) Lins (dB) ISL (dB) (3) (2) −0.2 −10 (4) −0.4 −20 −0.6 −30 −0.8 −1.0 −40 0 1000 2000 3000 0 f (MHz) 1000 2000 3000 f (MHz) Tamb = 25 °C Tamb = 25 °C Diode zero biased and inserted in series with a 50 Ω stripline circuit (1) IF = 100 mA (2) IF = 10 mA (3) IF = 1 mA (4) IF = 0.5 mA Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network Fig 3. Isolation of the diode as a function of frequency; typical values Fig 4. Insertion loss of the diode as a function of frequency; typical values BAP55LX_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 July 2007 4 of 8 BAP55LX NXP Semiconductors Silicon PIN diode 8. Package outline Leadless ultra small plastic package; 2 terminals; body 1 x 0.6 x 0.4 mm SOD882T (2×) L1 (2×) w 1 2 M A b (2×) (2×) w M B e1 A A1 y A E D (1) B 0 UNIT A mm 0.40 0.36 0.04 1 mm scale DIMENSIONS (mm are the original dimensions) A1 max 0.5 b D E e1 L1 w y 0.55 0.45 0.65 0.55 1.05 0.95 0.65 0.30 0.22 0.1 0.03 Note 1. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-12-14 06-04-12 SOD882T Fig 5. Package outline SOD882T BAP55LX_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 July 2007 5 of 8 BAP55LX NXP Semiconductors Silicon PIN diode 9. Abbreviations Table 7. Abbreviations Acronym Description PIN P-type, Intrinsic, N-type SMD Surface Mounted Device RF Radio Frequency 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BAP55LX_1 20070730 Product data sheet - - BAP55LX_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 July 2007 6 of 8 BAP55LX NXP Semiconductors Silicon PIN diode 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BAP55LX_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 July 2007 7 of 8 BAP55LX NXP Semiconductors Silicon PIN diode 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 1 2 2 2 2 5 6 6 7 7 7 7 7 7 8 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 July 2007 Document identifier: BAP55LX_1