SAVANTIC 2SC1358

SavantIC Semiconductor
Product Specification
2SC1358
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Designed for use in large screen color
deflection circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1400
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
4.5
A
ICM
Collector current-peak
10
A
IB
Base current
1.5
A
PT
Total power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
2SC1358
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
10
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.2
V
ICES
Collector cut-off current
VCE=1400V; VBE=0
1.0
mA
ICBO
Collector cut-off current
VCB=1000V; IE=0
20
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
200
µA
hFE-1
DC current gain
IC=0.5A ; VCE=15V
10
45
hFE-2
DC current gain
IC=3A ; VCE=15V
5
35
tstg
CONDITIONS
Storage time
MIN
TYP.
MAX
500
UNIT
V
10
µs
1.0
µs
IC=4A; IB1=-IB2=1.0A
PW=20µs
tf
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1358