SAVANTIC BU931T

SavantIC Semiconductor
Product Specification
BU931T
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Fast switching speed
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions..
·High voltage ignition coil driver
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
10
A
ICM
Collector current (peak)
15
A
IB
Base current
1
A
IBM
Base current
5
A
Ptot
Total power dissipation
125
W
Tj
Tstg
TC=25
Max.operating junction temperature
Storage temperature
175
-65~175
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
MAX
1.2
UNIT
/W
SavantIC Semiconductor
Product Specification
BU931T
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0;L=10mH
VCEsat-1
Collector-emitter saturation voltage
IC=7A ;IB=0.07A
1.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A; IB=0.1 A
1.8
V
VBEsat-1
Base-emitter saturation voltage
IC=7A ;IB=0.07A
2.2
V
VBEsat-2
Base-emitter saturation voltage
IC=8A; IB=0.1 A
2.4
V
ICES
Collector cut-off current
VCE =500V; VBE=0;
Tj=125
10
500
µA
ICEO
Collector cut-off current
VCE =450V; IB=0;
Tj=125
0.1
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
20
mA
hFE
DC current gain
IC=5A ; VCE=10V
VF
Diode forward voltage
IF=10A
2.5
V
2
MIN
TYP.
MAX
400
UNIT
V
300
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
BU931T