SavantIC Semiconductor Product Specification BU921 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current;high voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 5 A PT Total power dissipation 120 W Tj Junction temperature 175 Tstg Storage temperature -65~175 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.25 /W SavantIC Semiconductor Product Specification BU921 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=50mA 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=7 A;IB=140mA 1.8 V VBEsat-1 Base-emitter saturation voltage IC=5A;IB=50mA 2.2 V VBEsat-2 Base-emitter saturation voltage IC=7 A;IB=140mA 2.5 V ICES Collector cut-off current VCE=450V;VBE=0 TC=150 0.25 0.50 mA ICEO Collector cut-off current VCE=400V;IB=0 0.25 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 mA hFE DC current gain IC=2A; VEB=2V VF Diode forward voltage IF=7A 2.5 V 2 MIN TYP. MAX 400 UNIT V 500 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU921