SAVANTIC BU921

SavantIC Semiconductor
Product Specification
BU921
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current;high voltage
·DARLINGTON
APPLICATIONS
·Designed for automotive ignition applications
and inverter circuits for motor control.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
450
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
IB
Base current
5
A
PT
Total power dissipation
120
W
Tj
Junction temperature
175
Tstg
Storage temperature
-65~175
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.25
/W
SavantIC Semiconductor
Product Specification
BU921
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=5A;IB=50mA
1.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=7 A;IB=140mA
1.8
V
VBEsat-1
Base-emitter saturation voltage
IC=5A;IB=50mA
2.2
V
VBEsat-2
Base-emitter saturation voltage
IC=7 A;IB=140mA
2.5
V
ICES
Collector cut-off current
VCE=450V;VBE=0
TC=150
0.25
0.50
mA
ICEO
Collector cut-off current
VCE=400V;IB=0
0.25
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
mA
hFE
DC current gain
IC=2A; VEB=2V
VF
Diode forward voltage
IF=7A
2.5
V
2
MIN
TYP.
MAX
400
UNIT
V
500
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU921