SAVANTIC BUV48B

SavantIC Semiconductor
Product Specification
BUV48B
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package.
·High voltage.
·Fast switching speed.
APPLICATIONS
·Designed for switching and industrial
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
7
V
15
A
30
A
4
A
IC
Collector current
ICM
Collector current -peak
IB
Base current
IBM
Base current-peak
tp<5ms
20
A
PT
Total power dissipation
TC=25
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
tp<5ms
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
MAX
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
BUV48B
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
CONDITIONS
MIN
TYP.
MAX
600
UNIT
Emitter-base sustaining voltage
IC=100mA; IB=0
V
VCEsat-1
Collector-emitter saturation voltage
IC=6A; IB=1.5A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=4A
3
V
VBEsat-1
Base-emitter saturation voltage
IC=6A; IB=1.5A
1.5
V
VBEsat-2
Base-emitter saturation voltage
IC=10A; IB=4A
2
V
ICES
Collector cut-off current
VCE=1200V ;VBE=0
T=125°C
0.5
3
mA
ICEO
Collector cut-off current
VCE=600V; IC=0
1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
15
50
Switching times:
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A; IB1=- IB2=1.5A
VCC=250V
2
0.5
1.0
µs
1.5
3.0
µs
0.2
0.7
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
BUV48B