SavantIC Semiconductor Product Specification BUV48B Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package. ·High voltage. ·Fast switching speed. APPLICATIONS ·Designed for switching and industrial applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 7 V 15 A 30 A 4 A IC Collector current ICM Collector current -peak IB Base current IBM Base current-peak tp<5ms 20 A PT Total power dissipation TC=25 125 W Tj Junction temperature 150 Tstg Storage temperature -65~150 tp<5ms THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification BUV48B Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX 600 UNIT Emitter-base sustaining voltage IC=100mA; IB=0 V VCEsat-1 Collector-emitter saturation voltage IC=6A; IB=1.5A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=4A 3 V VBEsat-1 Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V VBEsat-2 Base-emitter saturation voltage IC=10A; IB=4A 2 V ICES Collector cut-off current VCE=1200V ;VBE=0 T=125°C 0.5 3 mA ICEO Collector cut-off current VCE=600V; IC=0 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 15 50 Switching times: ton Turn-on time ts Storage time tf Fall time IC=6A; IB1=- IB2=1.5A VCC=250V 2 0.5 1.0 µs 1.5 3.0 µs 0.2 0.7 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BUV48B