SavantIC Semiconductor Product Specification BU941ZPFI Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·High ruggedness electronic ignitions PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector VALUE UNIT 350 V 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 1 A IBM Base current-peak 5 A PT Total power dissipation 65 W Tj Max.operating junction temperature Tstg TC=25 Storage temperature 175 -65~175 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 2.3 UNIT /W SavantIC Semiconductor Product Specification BU941ZPFI Silicon NPN Power Transistors CHARACT ERISTICS Tj=25 unless otherwise specified SYMBOL VCL PARAMETER CONDITIONS MIN MAX UNIT 500 V Clamping voltage IC=0.1 A ;IB=0 VCE(sat-1) Collector-emitter saturation voltage IC=8A; IB=100m A 1.8 V VCE(sat-2) Collector-emitter saturation voltage IC=10A; IB=250m A 1.8 V VCE(sat-3) Collector-emitter saturation voltage IC=12A; IB=300m A 2.0 V VBE(sat-1) Base-emitter saturation voltage IC=8A; IB=100m A 2.2 V VBE(sat-2) Base-emitter saturation voltage IC=10A; IB=250m A 2.5 V VBE(sat-3) Base-emitter saturation voltage IC=12A; IB=300m A 2.7 V ICEO Collector cut-off current VCE=300V; IB=0 TC=125 0.1 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 20 mA hFE DC current gain IC=5A ; VCE=10V VF Diode forward voltage IF=10A 2.5 V 2 350 TYP. 300 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 BU941ZPFI