BPW24R Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 948642 • Fast response times • Angle of half sensitivity: ϕ = ± 12° • Hermetically sealed package • Cathode connected to package DESCRIPTION • Central chip alignment BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device features a low capacitance and high speed even at low supply voltages. • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • High speed photo detector PRODUCT SUMMARY Ira (µA) ϕ (deg) λ0.5 (nm) 60 ± 12 600 to 1050 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 COMPONENT BPW24R Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW24R Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation SYMBOL VALUE VR 60 UNIT V PV 210 mW Tj 125 °C Operating temperature range Tamb - 40 to + 125 °C Storage temperature range Tstg - 40 to + 125 °C t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Junction temperature Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified www.vishay.com 382 For technical questions, contact: [email protected] Document Number: 81520 Rev. 1.5, 11-Aug-08 BPW24R Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 200 VR = 50 V, E = 0 Iro VR = 0 V, f = 1 MHz, E = 0 CD 11 pF VR = 5 V, f = 1 MHz, E = 0 CD 3.8 pF Reverse dark current Diode capacitance MAX. UNIT 10 nA V 2 VR = 20 V, f = 1 MHz, E = 0 CD 2.5 pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 450 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo -2 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 55 µA EA = 1 klx TKIk 0.1 %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 20 V Ira 60 µA VR = 5 V, λ = 870 nm s(λ) 0.60 A/W VR = 5 V, λ = 900 nm s(λ) 0.55 A/W Angle of half sensitivity ϕ ± 12 deg Wavelength of peak sensitivity λp 900 nm λ0.5 600 to 1050 nm Temperature coefficient of Ik Reverse light current Absolute Spectral Sensitivity Range of spectral bandwidth 45 Rise time VR = 20 V, RL = 50 Ω, λ = 820 nm tr 7 ns Fall time VR = 20 V, RL = 50 Ω, λ = 820 nm tf 7 ns Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 10 4 V R = 50 V 10 3 10 2 10 1 10 0 20 94 8454 40 60 80 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 120 Tamb - Ambient Temperature (°C) Document Number: 81520 Rev. 1.5, 11-Aug-08 1.4 0 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 383 BPW24R Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors S (λ)rel - Relative Spectral Sensitivity 100 10 V R = 10 V λ = 950 nm 1 0.1 Ee - Irradiance (mW/cm2) 94 8455 Ira - Reverse Light Current (µA) 0.4 0.2 550 750 1150 950 λ - Wavelength (nm) Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 30° 1 mW/cm2 0.5 mW/cm2 λ = 950 nm 0.2 mW/cm2 10 0.6 94 8458 Fig. 3 - Reverse Light Current vs. Irradiance 100 0.8 0 350 10 1 1.0 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 0.1 0.01 Srel - Relative Sensitivity Ira - Reverse Light Current (µA) 1000 80° 1 0.1 1 100 10 VR - Reverse Voltage (V) 94 8456 0.6 0.4 0.2 0 94 8459 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 12 10 E=0 f = 1 MHz 8 6 4 2 0 0.1 94 8439 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 384 For technical questions, contact: [email protected] Document Number: 81520 Rev. 1.5, 11-Aug-08 BPW24R Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C ± 0.15 A ± 0.25 + 0.02 - 0.07 6.15 Ø 4.69 5.5 2.54 nom. 13.2 ± 0.7 (2.5) Chip position Ø 0.45 +0.02 -0.05 4 Lens ± 0.05 technical drawings according to DIN specifications Drawing-No.: 6.503-5022.02-4 Issue: 1; 24.08.98 14487 Document Number: 81520 Rev. 1.5, 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 385 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1