BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times 12784 • Angle of half sensitivity: ϕ = ± 15° • Base terminal connected • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. with APPLICATIONS • Detector for industrial electronic circuitry, measurement and control PRODUCT SUMMARY Ica (mA) ϕ (deg) λ0.5 (nm) 9 ± 15 900 to 980 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 3000 pcs, 3000 pcs/bulk T-1¾ COMPONENT BPV11F Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPV11F Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector base voltage TEST CONDITION VCBO 80 V Collector emitter voltage VCEO 70 V Emitter base voltage VEBO 5 V IC 50 mA tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Tamb ≤ 47 °C PV 150 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from body Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Collector current Collector peak current Power dissipation Junction temperature Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified www.vishay.com 346 For technical questions, contact: [email protected] Document Number: 81505 Rev. 1.6, 05-Sep-08 BPV11F Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors PV - Power Dissipation (mW) 200 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 TYP. MAX. UNIT VCE = 10 V, E = 0 ICEO 1 50 nA DC current gain VCE = 5 V, IC = 5 mA, E = 0 hFE 450 Collector emitter breakdown voltage Collector emitter dark current V Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 15 pF Collector base capacitance VCE = 0 V, f = 1 MHz, E = 0 CCBO 19 pF Collector light current Ee = 1 mW/cm2, λ = 950 nm, VCB = 5 V Ica 9 mA 3 Angle of half sensitivity ϕ ± 15 deg Wavelength of peak sensitivity λp 930 nm λ0.5 900 to 980 nm VCEsat 130 Range of spectral bandwidth Ee = 1 Collector emitter saturation voltage λ = 950 nm, IC = 1 mA mW/cm2, 300 mV Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 6 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5 µs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 110 kHz µs Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 10 V 102 101 10 20 94 8249 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Document Number: 81505 Rev. 1.6, 05-Sep-08 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 94 8239 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 347 BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant CCBO - Collector Base Capacitance (pF) 10 1 VCE = 5 V λ = 950 nm 0.1 0.01 0.01 0.1 Ee - Irradiance (mW/cm²) 94 8244 Ica - Collector Light Current (mA) 100 λ = 950 nm Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 1 0.05 mW/cm2 0.02 mW/cm2 0.1 0.1 94 8245 1 100 10 VCE - Collector Emitter Voltage (V) 0 1 100 10 VCB - Collector Base Voltage (V) Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage 20 f = 1 MHz 16 12 8 4 0 0.1 1 100 10 VCE - Collector Ermitter Voltage (V) Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage ton/toff - Turn-on/Turn-off Time (µs) B - Amplification 4 12 VCE = 5 V 600 400 200 0.1 1 10 IC - Collector Current (mA) 94 8253 VCE = 5 V RL = 100 Ω λ = 950 nm 10 8 6 ton 4 toff 2 0 100 Fig. 6 - Amplification vs. Collector Current www.vishay.com 348 8 0.1 800 94 8250 12 94 8247 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 0 0.01 f = 1 MHz 16 94 8246 Fig. 4 - Collector Light Current vs. Irradiance 10 20 10 1 CCEO - Collector Ermitter Capacitance (pF) Ica - Collector Light Current (mA) 100 0 4 8 12 16 IC - Collector Current (mA) Fig. 9 - Turn-on/Turn-off Time vs. Collector Current For technical questions, contact: [email protected] Document Number: 81505 Rev. 1.6, 05-Sep-08 BPV11F Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 10° 20° 30° 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 1.0 Srel - Relative Sensitivity S (λ) rel - Relative Spectral Sensitivity 0° 80° 0 800 900 λ – Wavelength (nm) 94 8258 0.4 0.6 1100 1000 0.2 0 94 8248 Fig. 10 - Relative Spectral Sensitivity vs. Wavelength Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C E B 0.8 + 0.2 - 0.1 Chip position ± 0.15 ± 0.3 ± 0.15 8.6 7.6 ± 0.3 5 R 4 2. (s 0.8 Area not plane + 0.2 - 0.1 ± 0.25 0.8 + 0.2 - 0.1 < 0.7 35 ± 0.5 12.3 e) er ph (4.55) 5 + 0.2 - 0.1 0.5 + 0.15 1.5 0.5 2.54 nom. 1.27 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5188.01-4 Issue:1; 01.07.96 96 12200 Document Number: 81505 Rev. 1.6, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 349 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1