VISHAY TEMD7000X01

TEMD7000X01
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• Radiant sensitive area (in mm2): 0.23
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
21841
• Angle of half sensitivity: ϕ = ± 60°
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
DESCRIPTION
• AEC-Q101 qualified
TEMD7000X01 is a high speed and high sensitive PIN
photodiode. It is a miniature surface mount device (SMD)
including the chip with a 0.23 mm2 sensitive area detecting
visible and near infrared radiation.
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
Ira (μA)
ϕ (deg)
λ0.1 (nm)
TEMD7000X01
3
± 60
430 to 1100
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TEMD7000X01
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
0805
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Tamb ≤ 25 °C
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Document Number: 81951
Rev. 1.3, 28-Sep-10
SYMBOL
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
°C
Tstg
- 40 to + 100
Acc. reflow solder profile fig. 8
Tsd
260
°C
Acc. J-STD-051
RthJA
270
K/W
For technical questions, contact: [email protected]
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TEMD7000X01
Silicon PIN Photodiode
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
VR = 10 V, E = 0
Iro
VR = 0 V, f = 1 MHz, E = 0
CD
4
pF
VR = 5 V, f = 1 MHz, E = 0
CD
1.3
pF
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
mV/K
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
mW/cm2,
λ = 950 nm
MIN.
TYP.
MAX.
UNIT
1
V
60
V
1
3
nA
Temperature coefficient of Vo
Ee = 1
TKVo
- 2.6
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
3
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
2.4
3
3.6
μA
Angle of half sensitivity
ϕ
± 60
deg
Wavelength of peak sensitivity
λp
900
nm
λ0.1
430 to 1100
nm
Rise time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tf
100
ns
Range of spectral bandwidth
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ira, rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8427
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
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2
1.4
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81951
Rev. 1.3, 28-Sep-10
TEMD7000X01
Silicon PIN Photodiode
Vishay Semiconductors
S(λ)rel - Relative Spectral Sensitivity
1
0.1
VR = 5 V
λ = 950 nm
0.01
0.001
0.01
0.8
0.6
0.4
0.2
0
0.1
1
10
Ee - Irradiance (mW/cm2 )
21535
1.0
350
550
Fig. 3 - Reverse Light Current vs. Irradiance
750
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
Ie, rel - Relative Radiant Intensity
Ira - Reverse Light Current (µA)
100
λ = 950 nm
10
1 mW/cm2
1
0.1
17026
1150
950
λ - Wavelength (nm)
94 8420
1
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
100
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
10
0.4
0.2
0
94 8013
VR - Reverse Voltage
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
CD - Diode Capacitance (pF)
8
6
E=0
f = 1 MHz
4
2
0
1
0.1
94 8430
10
100
VR- Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Document Number: 81951
Rev. 1.3, 28-Sep-10
For technical questions, contact: [email protected]
www.vishay.com
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TEMD7000X01
Silicon PIN Photodiode
Vishay Semiconductors
REFLOW SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
50
100
19841
150
200
250
FLOOR LIFE
300
Time (s)
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
PACKAGE DIMENSIONS in millimeters
20018
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For technical questions, contact: [email protected]
Document Number: 81951
Rev. 1.3, 28-Sep-10
TEMD7000X01
Silicon PIN Photodiode
Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters
21501
Document Number: 81951
Rev. 1.3, 28-Sep-10
For technical questions, contact: [email protected]
www.vishay.com
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TEMD7000X01
Silicon PIN Photodiode
Vishay Semiconductors
REEL DIMENSIONS in millimeters
8.4 +2.5
Ø 177.8 max.
Ø 55 min.
8.4 +0.15
Z
Form of the leave open
of the wheel is supplier specific.
14.4 max.
Ø 20.2 min.
1.5 min.
Ø 13 - 0.2
+ 0.5
Z 2:1
Drawing-No.: 9.800-5096.01-4
technical drawings
according to DIN
specifications
Issue: 2; 26.04.10
20875
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For technical questions, contact: [email protected]
Document Number: 81951
Rev. 1.3, 28-Sep-10
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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