ETC C2383

C2383
C2383 Silicon NPN Epitaxial Transistor
Description :The C2383 is designed for color TV class B sound output applications
Features: ●High voltage: VCEO=160V
●Complementary to A1013
Chip Appearance
Chip Size
1100um×1100um
Chip Thickness
210±20um
Bonding Pad Size
Base
240um×240um
Emitter 330um×260um
Front Metal
Al
Backside Metal
Au(As)
Scribe line width
60um
Wafer Size
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Min
Max
Unit
Collector Cutoff Current
ICBO
VCB=150V, IE=0
1.0
uA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0
1.0
uA
Collector-Base Breakdown Voltage
BVCBO
IC=0.1mA
160
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA
160
V
Emitter-Base Breakdown Voltage
BVEBO
IE=0.1mA
5.0
V
VCE=5V, IC=200mA
60
DC Current Gain
Collector Saturation Voltage
May 2004
hFE
VCE(sat)
IC=500mA, IB=50mA
Version :0.0
320
1.5
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