@vic AV8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION 3 The @vic AV8050S is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 2 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to @vic AV8550S SOT-23 MARKING D9 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT VCBO VCEO VEBO Pc Ic Tj TSTG 30 20 5 1 700 150 -65 ~ +150 V V V W mA °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25℃) Collector Current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE Ic=100µA,IE=0 Ic=1mA,IB=0 IE=100µA,Ic=0 VCB=30V,IE=0 VEB=5V,Ic=0 VCE=1V,Ic=1mA VCE=1V,Ic=150 mA VCE=1V,Ic=500mA Ic=500mA,IB=50mA Ic=500mA,IB=50mA VCE=1V,Ic=10mA 30 20 5 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 120 40 TYP 110 MAX UNIT 1 100 V V V uA nA 400 0.5 1.2 1.0 V V V QW-R206-001,A NPN EPITAXIAL SILICON TRANSISTOR @vic AV8050S PARAMETER SYMBOL TEST CONDITIONS MIN fT Cob VCE=10V,Ic=50mA VCB=10V,IE=0 f=1MHz 100 Current Gain Bandwidth Product Output Capacitance TYP MAX UNIT MHz pF 9.0 CLASSIFICATION OF hFE2 RANK RANGE C 120-200 D 160-300 E 280-400 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics Fig.2 DC current Gain IB=2.0mA 0.3 IB=1.5mA 0.2 IB=1.0mA IB=0.5mA 0.1 0 0.4 0.8 1.2 1.6 2.0 1 10 -1 10 0 10 1 10 2 10 0 10 -1 10 3 10 0 0.2 0.4 0.6 0.8 Base-Emitter voltage (V) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance VBE(sat) 3 10 2 10 VCE(sat) 0 10 1 10 2 10 Ic,Collector current (mA) 3 10 Cob,Capacitance (pF) 3 10 Ic=10*IB -1 10 VCE=1V 1 10 Ic,Collector current (mA) Current Gain-bandwidth product,fT(MHz) Saturation voltage (mV) 2 10 Collector-Emitter voltage ( V) 4 10 1 10 VCE=1V 0 10 0 Ic,Collector current (mA) IB=2.5mA 0.4 Fig.3 Base-Emitter on Voltage 2 10 3 10 IB=3.0mA HFE, DC current Gain Ic,Collector current (mA) 0.5 VCE=10V 2 10 1 10 0 10 0 10 1 10 2 10 Ic,Collector current (mA) 3 10 1.0 3 10 f=1MHz IE=0 2 10 1 10 0 10 0 10 1 10 2 10 3 10 Collector-Base voltage (V) QW-R206-001,A