A1020 A1020 Silicon PNP Epitaxial Transistor Description: The A1020 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to C2328 Chip Appearance Chip Size 760um×760um Chip Thickness 210±20um Bonding Pad Size Base 160×170um Emitter 130×260um Front Metal Al Backside Metal Au Scribe line width 60um Wafer Size 6 inch Electrical Characteristics( Ta=25℃) Characteristic Symbol Test Condition Min Max Unit Collector Cutoff Current ICBO VCB=-35V, IE=0 -0.1 uA Emitter Cutoff Current IEBO VEB=-5V, IC=0 -0.1 uA Collector-Base Breakdown Voltage BVCBO IC=-0.1mA -40 V Collector-Emitter Breakdown Voltage BVCEO IC=-10mA -30 V Emitter-Base Breakdown Voltage BVEBO IE=-0.1mA -5.0 V VCE=-2V, IC=-0.5A 80 DC Current Gain Collector Saturation Voltage May.2004 hFE VCE(sat) IC=-1A, IB=-50mA Version :0.0 400 -0.5 Page 1 of 1 V