MA-COM TVB170SC

Tyco/Electronics
PolySwitch®
SiBar
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PRODUCT: TVB170SC
DOCUMENT: 24273
PCN: 295555
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 1 OF 2
Thyristor Surge Protectors
Specification Status: RELEASED
PHYSICAL DESCRIPTION
A
MIN
B
MAX
MIN
MAX
C
MIN
MAX
D*
MIN
MAX
H
J
K
P
S
MIN
MAX
MIN
MAX
MIN
MAX
REF
MIN
mm: 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 .051
in: .160 .180 .130 .150 .075 .095 .077 .083 .002
* D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P
.152
.006
0.15
.006
0.30
.012
0.76
.030
1.27
.050
0.51
.020
5.21
.205
Other Physical Characteristics
Form Factor:
Lead Material:
Encapsulation Material:
Solderability:
Solder Heat Withstand:
Solvent Resistance:
Mechanical Shock:
SMB (Surface Mount DO-214 Package)
Tin/lead finish
Epoxy, meets UL94 V-0 requirements
per MIL-STD-750, Method 2026
per MIL-STD-750, Method 2031
per MIL-STD-750, Method 1022
per MIL-STD-750, Method 2016
Tape and Reel packaging per EIA 481-1
MAX
5.59
.220
Tyco/Electronics
PolySwitch®
SiBar
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PRODUCT: TVB170SC
Thyristor Surge Protectors
DEVICE RATINGS @ 25º C (Both Polarities)
Parameter
Off-State Voltage, Maximum at ID = 5 µA
Non-Repetitive Peak Impulse Current
Double exponential waveform (Notes 1 and 2)
10x1000 µsec
10/560 µsec
10/160 µsec
2/10 µsec
Critical Rate of Rise of On-State Current
Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak
Symbol
VDM
IPP1
IPP2
IPP3
IPP4
di/dt
DEVICE THERMAL RATINGS
Storage Temperature Range
Operating Temperature Range
Blocking or conducting state
Overload Junction Temperature
Maximum; Conducting state only
(+25ºC)
(VD1= 50V)
(VD2= VDM)
(IT=1A)
On-State Voltage
PW ≤ 300 µsec, Duty Cycle ≤ 2% (Note 2)
Breakover Current
Holding Current (Note 2)
Critical Rate of Rise of Off-State Voltage
(Linear waveform, VD = 0.8 X Rated VBO, TJ= +25ºC)
Capacitance
(f=1.0 Mhz, 50Vdc bias, 1 Vrms)
(f=1.0 Mhz, 2Vdc bias, 15mVrms)
Note 1. Allow cooling before test second polarity
Note 2. Measured under pulse conditions to reduce heating
VOLTAGE-CURRENT CHARACTERISTIC
Value
170
100
100
200
500
250
Units
V
A
A
A
A
A/µs
TSTG
TA
-65 to 150
-40 to 125
ºC
ºC
TJ
+175
ºC
ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25ºC unless otherwise noted)
Characteristics
Symbol
Min
Breakover Voltage
(+25ºC)
---VBO
dV/dt = 100V/µsec, ISC=1.0A, VDC= 1000V
Breakover Voltage
f=60Hz, ISC=1.0Arms, VOC = 1000Vrms,
R=1.0 kΩ, t = 0.5 cycle (Note 2)
Breakover Voltage Temperature Coefficient
Off-State Current
DOCUMENT: 24273
PCN: 295555
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 2 OF 2
Typ
230
Max
265
Units
V
VBO
----
230
265
V
dVBO/dTJ
ID1
ID2
VT
-------------
0.08
-------------
----2.0
5.0
5.0
%/ºC
µA
µA
V
IBO
IH
dv/dt
---175
5000
230
350
----
-----------
mA
mA
V/µs
C1
C2
-------
60
160
----
pF
pF