CHENMKO CHT2907ZPT

CHENMKO ENTERPRISE CO.,LTD
CHT2907ZPT
SURFACE MOUNT
PNP Switching Transistor
VOLTAGE 60 Volts
CURRENT 0.6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
* High current (Max.=600mA).
* Suitable for high packing density.
1.65+0.15
6.50+0.20
0.90+0.05
CONSTRUCTION
0.70+0.10
* PNP Switching Transistor
0.70+0.10
2.30+0.1
2.0+0.3
0.9+0.2
2.0+0.3
3.5+0.2
* Low voltage (Max.=60V) .
* High saturation current capability.
* Voltage controlled small signal switch.
7.0+0.3
3.00+0.10
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
MARKING
* ZCP
1
1 Base
CIRCUIT
3
2
2 Emitter
C (3)
3 Collector ( Heat Sink )
(1) B
E (2)
SC-73/SOT-223
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
-60
V
VCEO
collector-emitter voltage
open base
−
-60
V
VEBO
emitter-base voltage
open collector
−
-5
IC
collector current (DC)
−
-600
ICM
peak collector current
−
-800
mA
IBM
peak base current
−
mA
Ptot
total power dissipation
−
-200
2.0
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
V
mA
W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT2907ZPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
357
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = -60 V
−
-10
nA
IC = 0; VCB = -60 V; Tj = 125 OC
−
-10
uA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
-10
nA
hFE
DC current gain
IC = -0.1 mA; VCE = -10V; note 1
35
−
IC = -1.0 mA; VCE = -10V
IC = -10 mA; VCE =- 10V
50
75
−
−
IC = -10 mA; VCE = -10V;Ta = -55OC
35
−
IC = -150 mA; VCE = -10V
100
300
IC = -150 mA; VCE = -1.0V
50
−
IC = -500 mA; VCE = -10V
40
−
collector-emitter saturation
voltage
IC = -150 mA; IB = -15 m A
−
-400
mV
IC = -500 mA; IB = -50 m A
−
-1.6
V
base-emitter saturation voltage
IC = -150 mA; IB = -15 mA
-0.6
-1.3
V
IC = -500 mA; IB = -50 mA
−
-2.6
V
VCEsat
VBEsat
Cc
collector capacitance
IE = ie = 0; VCB = - 5 V; f = 1 MHz
−
8
pF
Ce
emitter capacitance
IC = ic = 0; VBE = -500 mV;
f = 1 MHz
−
30
pF
fT
transition frequency
IC = -20 mA; VCE = - 2 0 V;
f = 100 MHz
200
−
MHz
F
noise figure
IC = 100 µA; VCE = - 5 V; RS = 1 kΩ; −
f = 1.0 kHz
4
dB
Switching times (between 10% and 90% levels);
−
35
ns
−
10
ns
rise time
−
40
ns
toff
turn-off time
−
100
ns
ts
storage time
−
80
ns
tf
fall time
−
30
ns
ton
turn-on time
td
delay time
tr
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
ICon = -150 mA; IBon = -15mA;
IBoff = −15 mA
RATING CHARACTERISTIC CURVES ( CHT2907ZPT )
Total power dissipation Ptot = f (TS)
Collector-base capacitance CCB = f (VCB)
f = 1MHz
10 2
pF
360
mW
300
Ccb
5
P tot
270
240
210
10 1
180
150
5
120
90
60
30
0
0
15
30
45
60
75
90 105 120
10 0
10 -1
°C 150
TS
5
10 0
5
10 1
5
10 2
10 2 mA 5
10 3
Permissible pulse load
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp )
VCE = 5V
10 3
Ptot max
5
Ptot DC
D=
tp
T
V
VCB
10 3
MHz
tp
fT
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
5
10 2
5
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
tp
10 0
10 1
10 0
5
10 1
5
ΙC
RATING CHARACTERISTIC CURVES ( CHT2907ZPT )
Saturation voltage IC = f (VBEsat , VCEsat)
Delay time t d = f (IC)
hFE = 10
Rise time tr = f (IC)
10 3
10 3
ns
mA
ΙC
V CE
10 2
t r, t d
V BE
VBE = 0 V, VCC = 10 V,
VBE = 20 V, VCC = 30 V
5
tr
5
10 2
10 1
td
5
5
10
0
5
10 -2
10 -1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
10 1
0
10
1.6
5 10 1
5 10 2 mA 5 10 3
ΙC
VBE sat , VCE sat
Storage time tstg = f (IC)
Fall time t f = f (IC)
10 3
t stg
10 3
ns
tf
5
ns
VCC = 30 V
5
h FE = 20
h FE = 10
10 2
5
10 2
h FE = 10
5
h FE = 20
10 1
0
10
5 10 1
5 10 2 mA 5 10 3
ΙC
10 1
0
10
5 10 1
5 10 2 mA 5 10 3
ΙC
RATING CHARACTERISTIC CURVES ( CHT2907ZPT )
DC current gain hFE = f (IC )
VCE = 5V
10 3
h FE
5
150 OC
25 OC
10
2
-50 OC
5
10 1
-1
10
10
0
10
1
10
2
ΙC
mA 10 3
RATING CHARACTERISTIC CURVES ( CHT2907ZPT)
Test circuits
Delay and rise time
-30 V
Input
Z 0 = 50ohmS
t r < 2ns
200ohmS
Osc.
t r < 5 ns
1k
0
-16 V
50ohmS
200 ns
Storage and fall time
-6 V
+15 V
Input
Z 0 = 50ohmS
t r < 2 ns
1k
1k
0
-30 V
50ohmS
200 ns
Oscillograph: R > 100ohmS , C < 12pF, tr < 5ns
37ohmS
Osc.
t r < 5 ns