CHENMKO ENTERPRISE CO.,LTD CHT2907ZPT SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * High current (Max.=600mA). * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 CONSTRUCTION 0.70+0.10 * PNP Switching Transistor 0.70+0.10 2.30+0.1 2.0+0.3 0.9+0.2 2.0+0.3 3.5+0.2 * Low voltage (Max.=60V) . * High saturation current capability. * Voltage controlled small signal switch. 7.0+0.3 3.00+0.10 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 MARKING * ZCP 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E (2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -60 V VCEO collector-emitter voltage open base − -60 V VEBO emitter-base voltage open collector − -5 IC collector current (DC) − -600 ICM peak collector current − -800 mA IBM peak base current − mA Ptot total power dissipation − -200 2.0 Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V mA W Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT2907ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 357 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = -60 V − -10 nA IC = 0; VCB = -60 V; Tj = 125 OC − -10 uA IEBO emitter cut-off current IC = 0; VEB = 5 V − -10 nA hFE DC current gain IC = -0.1 mA; VCE = -10V; note 1 35 − IC = -1.0 mA; VCE = -10V IC = -10 mA; VCE =- 10V 50 75 − − IC = -10 mA; VCE = -10V;Ta = -55OC 35 − IC = -150 mA; VCE = -10V 100 300 IC = -150 mA; VCE = -1.0V 50 − IC = -500 mA; VCE = -10V 40 − collector-emitter saturation voltage IC = -150 mA; IB = -15 m A − -400 mV IC = -500 mA; IB = -50 m A − -1.6 V base-emitter saturation voltage IC = -150 mA; IB = -15 mA -0.6 -1.3 V IC = -500 mA; IB = -50 mA − -2.6 V VCEsat VBEsat Cc collector capacitance IE = ie = 0; VCB = - 5 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0; VBE = -500 mV; f = 1 MHz − 30 pF fT transition frequency IC = -20 mA; VCE = - 2 0 V; f = 100 MHz 200 − MHz F noise figure IC = 100 µA; VCE = - 5 V; RS = 1 kΩ; − f = 1.0 kHz 4 dB Switching times (between 10% and 90% levels); − 35 ns − 10 ns rise time − 40 ns toff turn-off time − 100 ns ts storage time − 80 ns tf fall time − 30 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = -150 mA; IBon = -15mA; IBoff = −15 mA RATING CHARACTERISTIC CURVES ( CHT2907ZPT ) Total power dissipation Ptot = f (TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF 360 mW 300 Ccb 5 P tot 270 240 210 10 1 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -1 °C 150 TS 5 10 0 5 10 1 5 10 2 10 2 mA 5 10 3 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V 10 3 Ptot max 5 Ptot DC D= tp T V VCB 10 3 MHz tp fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 ΙC RATING CHARACTERISTIC CURVES ( CHT2907ZPT ) Saturation voltage IC = f (VBEsat , VCEsat) Delay time t d = f (IC) hFE = 10 Rise time tr = f (IC) 10 3 10 3 ns mA ΙC V CE 10 2 t r, t d V BE VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V 5 tr 5 10 2 10 1 td 5 5 10 0 5 10 -2 10 -1 0 0.2 0.4 0.6 0.8 1.0 1.2 V 10 1 0 10 1.6 5 10 1 5 10 2 mA 5 10 3 ΙC VBE sat , VCE sat Storage time tstg = f (IC) Fall time t f = f (IC) 10 3 t stg 10 3 ns tf 5 ns VCC = 30 V 5 h FE = 20 h FE = 10 10 2 5 10 2 h FE = 10 5 h FE = 20 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 ΙC 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 ΙC RATING CHARACTERISTIC CURVES ( CHT2907ZPT ) DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE 5 150 OC 25 OC 10 2 -50 OC 5 10 1 -1 10 10 0 10 1 10 2 ΙC mA 10 3 RATING CHARACTERISTIC CURVES ( CHT2907ZPT) Test circuits Delay and rise time -30 V Input Z 0 = 50ohmS t r < 2ns 200ohmS Osc. t r < 5 ns 1k 0 -16 V 50ohmS 200 ns Storage and fall time -6 V +15 V Input Z 0 = 50ohmS t r < 2 ns 1k 1k 0 -30 V 50ohmS 200 ns Oscillograph: R > 100ohmS , C < 12pF, tr < 5ns 37ohmS Osc. t r < 5 ns