CHENMKO ENTERPRISE CO.,LTD CHT3946UPNPT SURFACE MOUNT Complementary Small Signal Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT363) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (1) (6) 0.65 1.3±0.1 2.0±0.2 0.65 CONSTRUCTION 0.1 (3) 0.2±0.05 * Complementary Pair * One CH3904-Type NPN One CH3906-Type PNP (4) 1.25±0.1 MARKING 0.9±0.1 0.15±0.05 * U4 0.7±0.1 0~0.1 0.1 Min. CIRCUIT 6 4 1 3 2.1±0.1 SC-88/SOT-363 Dimensions in millimeters CH3904 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC Ptot collector current DC total power dissipation Tamb ≤ 25 °C; note 1 − − 200 200 mA mW Tstg storage temperature − 65 +150 °C V CH3906 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -40 V VCEO collector-emitter voltage open base − -40 V VEBO emitter-base voltage open collector − -5 V IC Ptot Tstg collector current DC total power dissipation storage temperature Tamb ≤ 25 °C; note 1 − − −65 -200 200 +150 mA mW °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-8 RATING CHARACTERISTIC CURVES ( CHT3946UPNPT ) CH3904 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CH3904 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; note 1 VCEsat VBEsat IC = 0.1 mA 40 − IC = 1 mA 70 − IC = 10 mA 100 300 IC = 50 mA 60 − IC = 100 mA 30 − collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV IC = 50 mA; IB = 5 mA − 300 mV base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV IC = 50 mA; IB = 5 mA − 950 mV Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 8 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise Þgure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 5 dB Switching times (between 10% and 90% levels); − 65 ns − 35 ns rise time − 35 ns toff turn-off time − 240 ns ts storage time − 200 ns tf fall time − 50 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA RATING CHARACTERISTIC CURVES ( CHT3946UPNPT ) CH3906 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CH3906 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = - 30 V − -50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − -50 nA hFE DC current gain VCE = -1V; note 1 VCEsat VBEsat IC = -0.1mA 60 − IC = -1mA 80 − IC = -10 mA 100 300 IC = - 50 mA 60 − IC = -100 mA 30 − collector-emitter saturation voltage IC = -10 mA; IB = - 1 mA − -250 mV IC = -50 mA; IB = - 5 mA − -400 mV base-emitter saturation voltage IC = -10 mA; IB = -1mA -650 -850 mV IC = -50 mA; IB = - 5 mA − -950 mV Cc collector capacitance IE = ie = 0; VCB = - 5 V ; f = 1 MHz − 4.5 pF Ce emitter capacitance IC = ic = 0; VEB = -500 mV; f = 1 MHz − 10 pF fT transition frequency IC = 10 mA; VCE = - 2 0 V ; f = 100 MHz 250 − MHz F noise Þgure IC = 100 µA; VCE = - 5 V; RS = 1 k Ω ; − f = 10 Hz to 15.7 kHz 4 dB Switching times (between 10% and 90% levels); − 65 ns − 35 ns rise time − 35 ns toff turn-off time − 300 ns ts storage time − 225 ns tf fall time − 75 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA RATING CHARACTERISTIC CURVES ( CHT3946UPNPT ) 15 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 10 5 Cibo 50 Cobo 0 0.1 0 0 25 50 75 100 125 150 175 200 1000 10 100 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (NPN-CH3904) TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 0.1 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (NPN-CH3904) IC IB = 10 1000 100 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 10 100 10 1 0.1 0.1 1 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-CH3904) 10 Cibo Cobo 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-CH3904) 1 0.1 1 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 6, Input and Output Capacitance vs. Collector-Base Voltage (NPN-CH3904) 100 RATING CHARACTERISTIC CURVES ( CHT3946UPNPT) 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 1 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs Collector Current (PNP-CH3906) VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1.0 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-CH3906) 100 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-CH3906)