CHENMKO ENTERPRISE CO.,LTD CH817UPNPT SURFACE MOUNT NPN/PNP Silicon AF Transistor Array VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other switching applications. FEATURE SC-74/SOT-457 * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. (1) * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN/PNP transistor in one package. (6) 0.95 1.7~2.1 2.7~3.1 0.95 (3) (4) 0.25~0.5 CONSTRUCTION 1.4~1.8 * NPN/PNP transistor in one package. 0.935~1.3 0.08~0.2 0~0.15 0.3~0.6 CIRCUIT C1 B2 E2 6 5 4 2.6~3.0 TR2 TR1 1 2 3 E1 B1 C2 SC-74/SOT-457 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 500 mA ICM peak collector current − 1000 mA IBM peak base current − 200 mA Ptot total power dissipation − 330 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-7 RATING CHARACTERISTIC CURVES ( CH817UPNPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS VALUE UNIT note 1 105 K/W thermal resistance from junction to soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 25 V − 100 nA IC = 0; VCB = 25 V; TA = 150 OC − 50 uA IEBO emitter cut-off current IC = 0; VEB = 4 V − 100 nA hFE DC current gain IC = 100 mA; VCE = 1.0V; note 1 160 400 IC = 300 mA; VCE = 1.0V 100 − − 700 mV VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA − 1.2 V Cc collector capacitance IE = ie = 0; VCB = 10V ; f = 1 MHz − 6 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 60 pF fT transition frequency IC = 50 mA; VCE = 5 V ; f = 100 MHz 170 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1.0 kHz − 4 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. RATING CHARACTERISTIC CURVES ( CH817UPNPT ) Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 25V 400 10 mW V CBO 5 nA 10 4 P tot 300 250 10 max 3 200 10 150 typ 2 100 10 1 50 0 0 20 40 60 80 120 OC 100 10 0 150 0 50 oC 100 TS 150 TA Permissible Pulse Load Permissible Pulse Load R thJS = f (t p ) Ptotmax / PtotDC = f (t p ) 10 3 10 3 Ptotmax / PtotDC K/W R thJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s tp 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s tp 10 0 RATING CHARACTERISTIC CURVES ( CH817UPNPT ) Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), h FE = 10 IC = f (VBEsat ), h FE = 10 10 3 ΙC 10 3 mA ΙC 150 ooC 25 C -50 oC 10 2 mA 10 2 5 5 10 1 10 1 5 5 10 0 10 0 5 5 10 -1 0 0.2 150 oC 25 oC -50 oC 0.4 0.6 V 10 -1 0.8 0 2.0 1.0 3.0 DC current gain hFE = f (IC ) Transition frequency fT = f (IC) VCE = 5V VCE = 5V 4.0 10 3 10 3 h FE 5 V V BEsat VCEsat fT 100 oC 25 oC MHz 5 -50 oC 10 2 5 10 2 5 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 10 1 10 0 10 1 3 10 2 mA ΙC 10