DMS3015SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Low VSD - reducing the losses due to body diode conduction • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated Lead Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate) S D S D S D G D Top View Internal Schematic Top View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) VGS = 10V Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH Unit V V EAR Value 30 ±20 11 6.6 80 17 43 Symbol PD RθJA TJ, TSTG Value 1.55 81.3 -55 to +150 Unit W °C/W °C ID IDM IAR A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design. 4. Repetitive rating, pulse width limited by junction temperature. 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C DMS3015SSS Document number: DS32096 Rev. 4 - 2 1 of 6 www.diodes.com September 2010 © Diodes Incorporated DMS3015SSS Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 0.1 ±100 V mA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 1.5 2.5 V RDS (ON) - 8.5 9.5 11.9 14.9 mΩ |Yfs| VSD - 18 0.45 0.55 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 11A VGS = 4.5V, ID = 8.8A VDS = 5V, ID = 10A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf 0.3 - 1276 160 136 1.48 14.3 30.6 3.4 4.3 15.8 27.8 29.7 13.6 2.7 - pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID = 8.8A VDS = 15V, VGS = 10V, ID = 8.8A VGS = 4.5V, VDS = 15V, RG = 1.8Ω, ID =8.8A 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 30 30 V GS = 4. 5V 25 V DS = 5V 25 V GS = 4. 0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified V GS = 3.5V 20 V GS = 3.0V 15 10 V GS = 2.5V 5 20 15 10 TA = 150°C TA = 125°C 5 TA = 85°C V GS = 2.0V 0 0 0.5 1.0 1.5 V DS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMS3015SSS Document number: DS32096 Rev. 4 - 2 2.0 TA = 25°C TA = -55°C 0 0 1 2 3 V GS , GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com September 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) RDS(ON) , DRAIN-SOURCE ON-RESISTANCE (Ω ) 0.020 0.018 0.016 0.014 0.012 0.010 0.008 V GS = 4.5V 0.006 V GS = 10V 0.004 0.002 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.018 1.3 1.1 VGS = 10V ID = 10A 0.9 VGS = 4.5V I D = 5A 0.5 -50 V GS = 4.5V 0.016 TA = 150°C 0.014 TA = 125°C 0.012 TA = 85°C 0.010 TA = 25°C 0.008 TA = -55°C 0.006 0.004 0.002 0 0 RDS(ON ), DRAIN-SOURCE ON-RESISTANCE (Ω ) RDS(O N), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 0.7 0.020 30 1.7 5 10 15 20 25 30 ID, DRAIN CURREN T (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.020 0.018 0.016 0.014 0.012 VGS = 4.5V I D = 5A 0.010 0.008 0.006 VGS = 10V ID = 10A 0.004 0.002 0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 2.0 30 25 1.5 IS , SOURCE CURRENT (A) V GS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMS3015SSS ID = 1mA 1.0 20 TA = 25°C 15 10 5 0.5 -50 -25 0 25 50 75 100 125 TA , AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMS3015SSS Document number: DS32096 Rev. 4 - 2 3 of 6 www.diodes.com 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 V SD, SOURCE-DRAIN VOLTAGE (V) 1.0 Fig. 8 Diode Forward Voltage vs. Current September 2010 © Diodes Incorporated DMS3015SSS IDSS , DRAIN-SOURCE LEAKAGE CURRENT (µA) 10,000 C, CAPACITANCE (pF) 1,000 Ciss Coss Crss 100 10 0 5 10 15 20 25 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 30 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0 5 10 15 20 25 30 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 10 V GS , G ATE-SOURCE VOLTAGE (V) V DS = 15V ID = 8.8A 8 6 4 2 0 0 5 10 15 20 25 30 35 Q g, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 68°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.0001 DMS3015SSS Document number: DS32096 Rev. 4 - 2 0.001 t1 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 100 1,000 September 2010 © Diodes Incorporated DMS3015SSS Ordering Information (Note 8) Part Number DMS3015SSS-13 Packaging 2500 / Tape & Reel 8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo S3015SS Part no. YY WW Week: 01 ~ 53 Year: “09” = 2009 1 4 Package Outline Dimensions 0.254 NEW PRODUCT Notes: Case SO-8 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMS3015SSS Document number: DS32096 Rev. 4 - 2 5 of 6 www.diodes.com September 2010 © Diodes Incorporated DMS3015SSS NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMS3015SSS Document number: DS32096 Rev. 4 - 2 6 of 6 www.diodes.com September 2010 © Diodes Incorporated