DMN3018SSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C • • 100% UIS (Avalanche) Rated 22mΩ @ VGS = 10V 6.7A • ESD Protected Gate 30mΩ @ VGS = 4.5V 5.2A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description • Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data V(BR)DSS NEW PRODUCT ADVANCE INFORMATION Features 30V • Applications • Backlighting • Power Management Functions • DC-DC Converters • Low On-Resistance Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.008 grams (approximate) Drain SO-8 S2 D2 G2 D2 S1 D1 G1 D1 Gate Protection Diode ESD PROTECTED Top View Top View Pin Configuration Body Diode Gate Source Equivalent Circuit per Element Ordering Information (Note 4) Part Number DMN3018SSD-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View 8 5 Logo N3018SD Part no. YY WW Xth week: 01 ~ 53 Year: “11” = 2011 1 DMN3018SSD Document number: DS35583 Rev. 3 - 2 4 1 of 6 www.diodes.com January 2013 © Diodes Incorporated DMN3018SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) NEW PRODUCT ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State t < 10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 30 ±20 6.7 5.3 ID A 8.7 6.9 60 2.0 19 18 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode continuous Current Avalanche Current (Note 6) L = 0.1mH Repetitive Avalanche Energy (Note 6) L = 0.1mH Units V V IDM IS IAR EAR A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady state t < 10s Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 1.5 83 50 14.5 -55 to +150 RθJA RθJC TJ, TSTG Units W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 1.7 16 23 8.3 — 2.1 22 30 — 1.2 V Static Drain-Source On-Resistance 1 — — — 0.5 VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 5V, ID = 6.9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 697 97 67 1.47 6.0 13.2 2.2 1.8 4.3 4.4 20.1 4.1 7.3 7.9 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 15V, ID = 9A ns VDD = 15V, VGS = 10V, RL = 15Ω, ID = 1A, RG = 6Ω ns nC IF = 9A, di/dt = 500A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN3018SSD Document number: DS35583 Rev. 3 - 2 2 of 6 www.diodes.com January 2013 © Diodes Incorporated DMN3018SSD 30 20 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 20 15 10 12 T A = 150°C 8 TA = 125°C TA = 85°C 4 5 TA = 25°C TA = -55°C 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V 0.01 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 VGS = 10 V ID = 10A 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 50 0 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCE INFORMATION 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN3018SSD Document number: DS35583 Rev. 3 - 2 3 of 6 www.diodes.com 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE-SOURCE VOLTAGE Fig.2 Typical Transfer Characteristics 4.0 0.08 VGS = 4.5V 0.06 T A = 125°C 0.04 TA = 150°C TA = 85°C TA = 25°C 0.02 TA = -55°C 0 0 4 8 12 16 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.08 0.06 0.04 VGS = 4.5V ID = 5A 0.02 VGS = 10V ID = 10A 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature January 2013 © Diodes Incorporated DMN3018SSD ID = 1mA 1.6 IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 20 2.0 ID = 250µA 1.2 0.8 15 10 TA = 25°C 5 0.4 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) VGS GATE THRESHOLD VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 10 VDS = 15V, I D = 9A 8 6 4 2 Ciss Coss 100 Crss f = 1MHz 0 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Fig. 9 Gate Charge 16 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 20 100 PW = 10µs ID, DRAIN CURRENT (A) NEW PRODUCT ADVANCE INFORMATION 2.4 10 DC 1 PW = 10s PW = 1s 0.1 0.01 0.1 PW = 100ms PW = 10ms PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMN3018SSD Document number: DS35583 Rev. 3 - 2 100 4 of 6 www.diodes.com January 2013 © Diodes Incorporated DMN3018SSD r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 85° C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 NEW PRODUCT ADVANCE INFORMATION 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN3018SSD Document number: DS35583 Rev. 3 - 2 5 of 6 www.diodes.com January 2013 © Diodes Incorporated DMN3018SSD NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com DMN3018SSD Document number: DS35583 Rev. 3 - 2 6 of 6 www.diodes.com January 2013 © Diodes Incorporated