DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V(BR)DSS 20V Features RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 450mA 1.2Ω @ VGS = 2.5V 400mA 1.8Ω @ VGS = 1.8V 330mA 2.4Ω @ VGS = 1.5V 300mA • • • • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data • • Applications • • • • • • • General Purpose Interfacing Switch Power Management Functions DC-DC Converters Analog Switch Dual N-Channel MOSFET Low On-Resistance Very low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm Low Package Profile, 0.45mm Maximum Package height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability • Case: SOT963 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (approximate) D1 G2 S2 S1 G1 D2 SOT963 Top View ESD PROTECTED Top View Schematic and Transistor Diagram Ordering Information (Note 4) Part Number DMN2990UDJ-7 Notes: Case SOT963 Packaging 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information L1 DMN2990UDJ Document number: DS35401 Rev. 7 - 2 L1 = Product Type Marking Code 1 of 6 www.diodes.com September 2012 © Diodes Incorporated DMN2990UDJ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 5) VGS = 1.8V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 20 ±8 450 350 ID 330 220 800 ID Pulsed Drain Current (Note 6) IDM Units V V mA mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 350 360 -55 to +150 Units mW °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 20 - - 50 100 ±100 V |Yfs| VSD 0.4 180 - 0.60 0.75 0.90 1.2 2.0 0.6 1.0 0.99 1.2 1.8 2.4 1.0 mS V Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 27.6 4.0 2.8 0.5 0.07 0.07 4.0 3.3 19.0 6.4 - pF pF pF nC nC nC ns ns ns ns Zero Gate Voltage Drain Current @Tc = +25°C IDSS Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS VGS(th) Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: nA nA V Ω Test Condition VGS = 0V, ID = 250μA VDS = 5V, VGS = 0V VDS = 16V, VGS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA VGS = 1.2V, ID = 1mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA VDS = 16V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN2990UDJ Document number: DS35401 Rev. 7 - 2 2 of 6 www.diodes.com September 2012 © Diodes Incorporated DMN2990UDJ 0.8 0.8 VGS = 4.5V VDS = 5.0V T A = -55°C TA = 85°C TA = 25°C ID, DRAIN CURRENT(A) ID , DRAIN CURRENT (A) VGS = 3.0V 0.6 VGS = 2.5V VGS = 2.0V 0.4 VGS = 1.5V 0.2 0.6 T A = 125°C T A = 150°C 0.4 0.2 VGS = 1.2V 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (A) Fig. 1 Typical Output Characteristics 1.2 1.0 VGS = 1.8V 0.8 0.6 VGS = 2.5V VGS = 4.5V 0.4 0.2 0 0.2 0.4 0.6 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1.0 VGS = 4.5V, ID = 300mA 0.8 VGS = 2.5V, ID = 150mA 0.6 -50 0 0 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT VGS = 4.0V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(°C) Fig. 5 On-Resistance Variation with Temperature DMN2990UDJ Document number: DS35401 Rev. 7 - 2 3 of 6 www.diodes.com 0.5 1.0 1.5 2.0 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.0 1.2 1.0 VGS = 4.5V TA = 150°C 0.8 TA = 125°C 0.6 T A = 85°C T A = 25°C 0.4 TA = -55°C 0.2 0 0 0.2 0.4 0.6 0.8 ID DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.0 1.2 1.0 VGS = 2.5V ID = 150mA 0.8 0.6 VGS = 4.5V ID = 300mA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(°C) Fig. 6 On-Resistance Variation with Temperature September 2012 © Diodes Incorporated DMN2990UDJ IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 0.8 TA= 25°C 0.6 0.4 0.2 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE- DRAIN VOLTAGE (V) Fig. 8 Diodes Forward Voltage vs. Current 1,000 50 40 IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz 30 Ciss 20 10 Coss 0 TA = 150°C 100 TA = 125°C TA = 25°C Crss 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance TA = 85°C 10 1 20 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 2 1 8 4 RDS(on) Limited DC 6 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT 1.2 4 2 0.1 0.2 0.4 0.6 0.8 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge DMN2990UDJ Document number: DS35401 Rev. 7 - 2 PW = 10µs PW = 10ms PW = 1ms 0.01 T J(MAX) = 150°C T A = 25°C Single Pulse RDS(ON) Limited ID = 250mA 0 PW = 1s PW = 100ms VDS = 10V 0 PW = 100µs PW = 10s 1 0.001 0.1 4 of 6 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE Fig. 12 SOA, Safe Operation Area 100 September 2012 © Diodes Incorporated DMN2990UDJ R(t), TRANSIENT THERMAL RESISITANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA (t) = r(t)*RθJA RθJA = 356C/W Duty Cycle, D = t1/t2 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resisitance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D e1 SOT963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 c 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm L E E1 e b (6 places) c A A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DMN2990UDJ Document number: DS35401 Rev. 7 - 2 5 of 6 www.diodes.com September 2012 © Diodes Incorporated DMN2990UDJ NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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