DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • Mechanical Data • • Low Gate Charge Low RDS(ON): • 28mΩ @VGS = 4.5V • 32mΩ @VGS = 2.5V • 40mΩ @VGS = 1.8V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Case: SOT-26 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) • • • • • • SOT-26 D1 S1 G1 D1 / D2 D1 / D2 S2 G2 D2 G1 G2 S1 S2 TOP VIEW TOP VIEW Maximum Ratings Pin Configuration @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Drain Current (Note 2) Thermal Characteristics ID IDM Value 20 ±8 4.2 3.2 30 Unit V V Value 0.98 128 -55 to +150 Unit W °C /W °C A A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t ≤10s Operating and Storage Temperature Range Notes: Equivalent Circuit Symbol PD RθJA TJ, TSTG 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMG9926UDM Document number: DS31770 Rev. 4 - 2 1 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG9926UDM @TA = 25°C unless otherwise specified Characteristic STATIC CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol Static Drain-Source On-Resistance (Note 5) Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resisitance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Min Typ Max Unit ⎯ ⎯ ⎯ ⎯ 22 25 31 ⎯ 1 ±100 0.9 V μA nA V 28 32 40 mΩ ⎯ ⎯ 7 0.7 ⎯ 0.9 S V Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 856 83 78 1.32 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 8.3 1.3 3.1 8.4 8.2 40.4 8.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC nC ns ns ns ns BVDSS IDSS IGSS VGS(th) 20 ⎯ ⎯ 0.5 RDS (ON) ⎯ |YFS| VSD Test Condition ID = 250μA, VGS = 0V VDS = 20V, VGS = 0V VDS = 0V, VGS = ±8V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 8.2A VGS = 2.5V, ID = 3.3A VGS = 1.8V, ID = 2.0A VDS = 10V, ID = 4A IS = 2.25A, VGS = 0V VDS = 10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 8.2A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 5. Test pulse width t = 300ms. 6. Guaranteed by design. Not subject to production testing. 20 30 25 VGS = 8.0V 20 16 VGS = 3.0V ID, DRAIN CURRENT (A) VGS = 4.5V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 2.5V VGS = 2.0V 15 10 VGS = 1.5V 12 8 T A = 150°C 4 5 VDS = 5V TA = 125°C T A = 85°C TA = 25°C TA = -55°C 0 0 0.4 0.8 1.2 1.6 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMG9926UDM Document number: DS31770 Rev. 4 - 2 0 0.5 2 1 1.5 VGS, GATE SOURCE VOLTAGE (V) 2 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com June 2009 © Diodes Incorporated 0.05 0.04 VGS = 1.8V 0.03 VGS = 2.5V VGS = 4.5V 0.02 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 0 VGS = 4.5V 0.04 TA = 125°C TA = 85°C TA = 25°C 0.02 TA = -55°C 0.01 0 30 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 20 0.05 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) T A = 150°C 0.03 1.8 1.4 VGS = 2.5V ID = 5A 1.2 VGS = 4.5V ID = 8.2A 1.0 0.04 VGS = 2.5V ID = 5A 0.03 VGS = 4.5V ID = 8.2A 0.02 0.01 0.8 0 -50 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.0 10 0.8 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG9926UDM ID = 1mA 0.6 ID = 250µA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG9926UDM Document number: DS31770 Rev. 4 - 2 1 0.1 0.01 0.4 3 of 6 www.diodes.com TA = 25°C 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1 June 2009 © Diodes Incorporated DMG9926UDM 10,000 10,000 TA = 150°C IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 1,000 Ciss Coss 100 Crss 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 TA = -55°C 0.1 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 20 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.1 0.1 D = 0.05 D = 0.9 D = 0.02 RθJA(t) = r(t) * RθJA R θJA = 130°C/W D = 0.01 0.01 P(pk) D = 0.005 0.001 0.00001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMG9926UDM-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DMG Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMG9926UDM Document number: DS31770 Rev. 4 - 2 Mar 3 YM NEW PRODUCT f = 1MHz DMG = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 4 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D June 2009 © Diodes Incorporated DMG9926UDM Package Outline Dimensions A SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm NEW PRODUCT B C H K M J L D Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X DMG9926UDM Document number: DS31770 Rev. 4 - 2 5 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG9926UDM IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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