DMG4496SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) • • • • • SO-8 S D S D S D G D TOP VIEW Maximum Ratings TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State Unit V V IDM IAR EAR Value 30 ±25 10 6 60 8 3.2 Symbol PD RθJA TJ, TSTG Value 1.42 88.49 -55 to +150 Unit W °C/W °C TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH ID A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on 1 in.2 FR-4 board with 2oz. Copper, in a still air environment @ TA = 25°C. The value in any given application depends on the user's specific board design. 4. Repetitive rating, pulse width limited by junction temperature. 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C DMG4496SSS Document number: DS32048 Rev. 3 - 2 1 of 6 www.diodes.com April 2010 © Diodes Incorporated DMG4496SSS @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) 0.8 1.2 2.0 V RDS (ON) - 16 22 21.5 29 mΩ |Yfs| VSD - 11.7 0.70 1 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A VDS = 5V, ID = 10A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 493.5 94.5 50.4 2.86 4.7 10.2 1.4 1.7 4.76 3.64 19.5 4.9 - pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS =15V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID =10A VDS = 15V, VGS = 10V, ID =10A VGS = 10V, VDs = 15V, RG = 6Ω, RL = 15Ω, 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 20 30 VGS = 10V VDS = 5V 25 VGS = 4.5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 4.0V VGS = 3.5V 15 10 5 15 10 VGS = 150°C VGS = 125°C VGS = 85°C 5 VGS = 3.0V VGS = 25°C VGS = 2.5V VGS = -55°C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG4496SSS Document number: DS32048 Rev. 3 - 2 5 2 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 April 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 VGS = 3.5V 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 5A 1.5 VGS = 10V ID = 10A 1.3 1.1 0.9 0.7 0.5 -50 0.04 VGS = 10V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 1.7 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 10A 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 0 -50 Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 20 2.0 18 1.8 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4496SSS 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 14 12 TA = 25°C 10 8 6 4 0.8 2 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG4496SSS Document number: DS32048 Rev. 3 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 April 2010 © Diodes Incorporated DMG4496SSS 10,000 1,000 IDSS, LEAKAGE CURRENT (nA) f = 1MHz NEW PRODUCT C, CAPACITANCE (pF) Ciss Coss 100 Crss 10 T A = 150°C 1,000 T A = 125°C 100 T A = 85°C 10 TA = 25°C 1 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 90°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 100 1,000 (Note 8) Part Number DMG4496SSS-13 Notes: 10 Case SO-8 Packaging 2500 / Tape & Reel 8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo G4496SS Part no. YY WW Week: 01 ~ 53 Year: “09” = 2009 1 DMG4496SSS Document number: DS32048 Rev. 3 - 2 4 4 of 6 www.diodes.com April 2010 © Diodes Incorporated DMG4496SSS 0.254 NEW PRODUCT Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4496SSS Document number: DS32048 Rev. 3 - 2 5 of 6 www.diodes.com April 2010 © Diodes Incorporated DMG4496SSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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