Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet Features ♦ 2.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG ® Process Description The MAAPGM0066-DIE is a 3-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Also Available in: Primary Applications ♦ ♦ ♦ ♦ Point-to-Point Radios Point-to-Multipoint Radios SatCom Broadband Wireless Access SAMPLES Description Plastic Sample Board (Die) Mechanical Sample (Die) Part Number MAAP-000066-PKG003 MAAP-000066-SMB004 MAAP-000066-MCH000 Electrical Characteristics: T B = 30°C1, Z0 = 50Ω, VDD = 8V, IDQ = 650mA2, Pin = 6 dBm Parameter 1 1. 2. Symbol Typical Units Bandwidth f 2.5-6.0 GHz Output Power POUT 33.5 dBm 1-dB Compression Point P1dB 33.3 dBm Small Signal Gain G 33.5 dB Power Added Efficiency PAE 35 % Input VSWR VSWR 1.4:1 Output VSWR VSWR 2.4:1 Output Third Order Intercept TOI 42 dBm Output Third Order Intermod, Pout = 26 dBm (DCL) IMD3 40 dBc Gate Current IGG 10 mA Drain Current IDD 810 mA TB = MMIC Base Temperature Adjust VGG between –2.6 and –1.2V to achieve specified Idq. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet Maximum Ratings3 Parameter Symbol Absolute Maximum Units Input Power PIN 16.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 1.04 A Quiescent DC Power Dissipated (No RF) PDISS 10.4 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 4.0 8.0 10.0 V Gate Voltage VGG -2.6 -2.0 -1.2 V Input Power PIN 6.0 13.0 dBm Thermal Resistance ΘJC 14.0 MMIC Base Temperature TB °C/W Note 5 °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * I DQ Power Derating Curve, Quiescent (No RF) 12 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. Peak Power Dissipation (W) 10 8 6 4 2 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2.0 V). 4. Set RF input. 0 0 20 40 60 80 100 120 140 160 180 MMIC Base Temperature (ºC) 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 40 Pout PAE 40 36 34 35 34 32 30 32 30 25 28 20 26 15 26 24 10 24 22 5 22 0 20 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 P1dB (dBm) 38 40 PAE (%) 45 36 38 30 28 6.5 6V 8V 10V 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 40 40 38 38 36 36 34 34 Psat (dBm) Psat (dBm) 5.0 5.5 6.0 6.5 Figure 2. 1dB Compression Point and Drain Voltage at IDSQ=650mA Figure 1. Output Power and Power Added Efficiency at VD = 8V, Pin = 6dBm, and IDSQ=650mA 32 30 28 32 30 28 26 26 6V 8V 10V 24 22 -25ºC 30ºC 87ºC 24 22 20 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 6.5 2.5 3.0 3.5 40 6 32 5 28 24 4 VSWR Gain Input VSWR Output VSWR 16 3 12 8 2 Output Power (dBm), SSG(dB), PAE (%) 36 0 1 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 40 1.00 39 0.95 38 0.90 37 0.85 36 0.80 35 0.75 34 0.70 33 0.65 Pout SSG PAE IDS 32 31 4 2.0 4.5 Figure 4. Saturated Output Power and Temperature at VD =8V and IDSQ=650mA Figure 3. Saturated Output Power and Drain Voltage at IDSQ=650mA. 20 4.0 Frequency (GHz) Frequency (GHz) Gain (dB) 4.5 Frequency (GHz) 5.0 5.5 6.0 6.5 Frequency (GHz) Figure 5. Small Signal Gain and Input and Output VSWR at VD = 8V and IDSQ=650mA 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 0.60 0.55 30 30 40 50 60 70 80 90 100 110 120 130 140 0.50 150 Junction Temperature (ºC) Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 8V, 4 GHz, and IDSQ =650mA • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Drain Current (A) Pout (dBm) 50 Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 40 40 38 38 36 34 36 34 30 28 32 Gain (dB) Output Power (dBm) 32 26 24 22 30 28 3.5 GHz 4 GHz 4.5 GHz 20 18 26 16 3.5 GHz 4 GHz 4.5 GHz 24 14 22 12 10 20 -8 -6 -4 -2 0 2 4 6 8 10 20 22 24 26 28 30 32 34 36 38 Input Power (dBm) Output Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and IDSQ=650mA Figure 8. Gain vs. Output Power and Frequency at VD=10V and IDSQ=650mA. 40 1.5 50 1.4 45 3.5 GHz 4 GHz 4.5 GHz 40 1.3 1.2 Drain Current (A) PAE (%) 35 30 25 20 1.1 1.0 0.9 15 0.8 10 0.7 5 0.6 3.5 GHz 4 GHz 4.5 GHz 0.5 0 -8 -6 -4 -2 0 2 4 6 8 -8 10 -6 -4 -2 0 2 4 6 8 Input Power (dBm) Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at VD=10V and IDSQ=650mA Figure 10. Drain Current vs. Input Power and Frequency at VD=10V and I DSQ =650mA 40 10 40 38 38 36 36 34 34 30 28 Gain (dB) Output Power (dBm) 32 26 24 22 20 3.5 GHz 4 GHz 4.5 GHz 18 16 32 30 28 26 3.5 GHz 4 GHz 4.5 GHz 24 14 22 12 20 10 -8 -6 -4 -2 0 2 4 6 8 10 20 22 24 26 28 30 32 34 36 38 Input Power (dBm) Output Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at VD=8V and I DSQ =650mA Figure 12. Gain vs. Output Power and Frequency at VD=8V and IDSQ=650mA. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 40 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 1.5 50 1.4 45 3.5 GHz 4 GHz 4.5 GHz 40 1.3 Drain Current (A) PAE (%) 30 25 20 1.0 0.9 0.8 10 0.7 5 0.6 0.5 -8 -6 -4 -2 0 2 4 6 8 -8 10 -6 -4 -2 0 2 4 6 8 Input Power (dBm) Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power and Frequency at VD=8V and IDSQ=650mA Figure 14. Drain Current vs. Input Power and Frequency at VD=8V and IDSQ=650mA 10 100 50 48 80 70 42 60 IMD3 (dBc) 44 40 38 3 GHz 4 GHz 5 GHz 90 3 GHz 4 GHz 5 GHz 46 TOI (dBm) 1.1 15 0 50 40 36 30 34 20 32 10 0 30 10 12 14 16 18 20 22 10 24 12 14 16 18 20 22 24 Fundamental Output Power, Single Tone (dBm) Fundamental Output Power per Tone (dBm) Figure 15. Third Order Intercept vs. Output Power and Frequency at 6V. Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V. 100 50 46 80 70 42 60 IMD3 (dBc) 44 40 38 3 GHz 4 GHz 5 GHz 90 3 GHz 4 GHz 5 GHz 48 TOI (dBm) 3.5 GHz 4 GHz 4.5 GHz 1.2 35 50 40 36 30 34 20 32 10 0 30 10 12 14 16 18 20 22 24 10 12 14 16 18 20 22 24 Fundamental Output Power, Single Tone (dBm) Fundamental Output Power per Tone (dBm) Figure 17. Third Order Intercept vs. Output Power and Frequency at 8V. Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 50 100 48 70 42 60 IMD3 (dBc) TOI (dBm) 80 44 40 38 3 GHz 4 GHz 5 GHz 90 3 GHz 4 GHz 5 GHz 46 50 40 36 30 34 20 32 10 0 30 10 12 14 16 18 20 22 24 OFundamental Output Power, Single Tone (dBm) Figure 19. Third Order Intercept vs. Output Power and Frequency at 10V. 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 10 12 14 16 18 20 22 24 Fundamental Output Power per Tone (dBm) Figure 20. Third Order Intermod vs. Output Power and Frequency at 10V. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet Mechanical Information Chip Size: 3.000 x 3.150 x 0.075 mm (118 x 124 x 3 mils) Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 1. Die Layout Bond Pad Dimensions Pad Size (μm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VDD 200 x 100 8x4 DC Gate Supply Voltage VGG 100 x 100 4x4 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet Assembly VDD 100 pF 0.1 F RFOUT RFIN VGG 100 pF 0.1 F Figure 2. Recommended operational configuration. Wire bond as shown. Assembly Instructions: Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent 8 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.